G01R31/24

Method and apparatus for nondestructive testing of a gas discharge tube

A method and apparatus for nondestructive testing of a gas discharge tube (GDT) comprising: electrically connecting a first terminal of the GDT to a first port of a vector network analyzer (VNA); electrically connecting a second terminal of the GDT to a second port of the VNA; measuring S parameters with the VNA; determining GDT capacitance and insertion loss based on the measured S parameters; comparing the determined capacitance and insertion loss of the GDT with a threshold value to determine if the GDT is functional.

System and method for fault management in lighting systems

This invention discloses a method and apparatus for managing lighting systems is disclosed. The method comprises performing a training phase for a plurality of settings wherein the training is represented by statistical parameters associated with a statistical model and then performing a monitoring phase to monitor the lighting system, determining whether characteristics of the monitored lighting system correspond to the model obtained during the training phase and determining an error exists when the monitored lighting system is not within tolerance values of the statistical parameters.

Problem detection for cable-fed-loads
10317441 · 2019-06-11 · ·

A device (1) for detecting a problem in or near a load (2, 3) coupled to a cable (6) of a cable system comprises an analyzing part (11) for analyzing a waveform of a cable signal for feeding the load (2, 3) and a deciding part (12) for in response to an analysis result deciding whether a problem in or near the load (2, 3) is present or not. The load (2, 3) may be coupled to the cable (6) via a driver (4, 5). The problem in or near the load (2, 3) may result in the driver (4, 5) amending a value of the waveform at or near a crest or a trough of the waveform. The analysis result may define whether the waveform has been amended by more than a threshold or not. The amending of the value of the waveform at or near the crest or the trough may comprise a positive pulse added to a crest or a negative pulse added to a trough.

Problem detection for cable-fed-loads
10317441 · 2019-06-11 · ·

A device (1) for detecting a problem in or near a load (2, 3) coupled to a cable (6) of a cable system comprises an analyzing part (11) for analyzing a waveform of a cable signal for feeding the load (2, 3) and a deciding part (12) for in response to an analysis result deciding whether a problem in or near the load (2, 3) is present or not. The load (2, 3) may be coupled to the cable (6) via a driver (4, 5). The problem in or near the load (2, 3) may result in the driver (4, 5) amending a value of the waveform at or near a crest or a trough of the waveform. The analysis result may define whether the waveform has been amended by more than a threshold or not. The amending of the value of the waveform at or near the crest or the trough may comprise a positive pulse added to a crest or a negative pulse added to a trough.

Calculation apparatus and method for calculating relationship between charge amount and potential

According to one embodiment, a calculation apparatus includes a calculator. The calculator calculates a relationship between a charge amount and a potential according to an arbitrary initial charge amount based on a relationship between a charge amount and a potential of an electrode of a secondary battery on a charge side and a relationship between a charge amount and a potential of the electrode on a discharge side.

Method for producing an arc detection signal and arc detection arrangement

A method for producing an arc detection signal on the basis of a plurality of observation signals comprises producing an arc detection part-signal for each of at least two observation signals. Producing each of the part-signals includes correlating the respective observation signal with a correlation signal by influencing the correlation signal with the respective observation, thereby producing a correlation result; producing or modifying a coefficient on the basis of the correlation result; and weighting the respective observation signal with the coefficient. The arc detection part-signals are added to form the arc detection signal.

Method for producing an arc detection signal and arc detection arrangement

A method for producing an arc detection signal on the basis of a plurality of observation signals comprises producing an arc detection part-signal for each of at least two observation signals. Producing each of the part-signals includes correlating the respective observation signal with a correlation signal by influencing the correlation signal with the respective observation, thereby producing a correlation result; producing or modifying a coefficient on the basis of the correlation result; and weighting the respective observation signal with the coefficient. The arc detection part-signals are added to form the arc detection signal.

Wide-bandgap semiconductor layer characterization

A method of characterizing a wide-bandgap semiconductor material is provided. A substrate is provided, which includes a layer stack of a conductive material layer, a dielectric material layer, and a wide-bandgap semiconductor material layer. A mercury probe is disposed on a top surface of the wide-bandgap semiconductor material layer. Alternating-current (AC) capacitance of the layer stack is determined as a function of a variable direct-current (DC) bias voltage across the conductive material layer and the wide-bandgap semiconductor material layer. A material property of the wide-bandgap semiconductor material layer is extracted from a profile of the AC capacitance as a function of the DC bias voltage.

Wide-bandgap semiconductor layer characterization

A method of characterizing a wide-bandgap semiconductor material is provided. A substrate is provided, which includes a layer stack of a conductive material layer, a dielectric material layer, and a wide-bandgap semiconductor material layer. A mercury probe is disposed on a top surface of the wide-bandgap semiconductor material layer. Alternating-current (AC) capacitance of the layer stack is determined as a function of a variable direct-current (DC) bias voltage across the conductive material layer and the wide-bandgap semiconductor material layer. A material property of the wide-bandgap semiconductor material layer is extracted from a profile of the AC capacitance as a function of the DC bias voltage.

Gimbal assembly test system and method

Aspects of the present disclosure provide a gimbal assembly test system including: a protective cover affixed to a test surface of a wafer probe card mounted within a gimbal bearing, wherein the protective cover includes an exterior surface oriented outward from the test surface of the wafer probe card; and a recess extending into the exterior surface of the protective cover and shaped to matingly engage a load cell tip therein.