A method for non-invasively imaging plasma parameters has been invented. Crossed dipole pairs are used to differentiate changes in the measured complex self- and mutual impedances due to plasma density and magnetic field. Measurements of the complex self-impedance and mutual impedance between pairs of antennas over a wide range of frequencies provide spatial information to create an image of the plasma density and magnetic field. The spectral information is acquired simultaneously using a Gaussian monopulse as the driver signal.

A magnetic field measuring apparatus includes a digital FLL circuit including ADC that converts a periodically changing voltage output from a SQUID according to a change in a magnetic field into a digital value, a digital integrator that integrates the digital value output from the ADC, a DAC that converts an integrated value output from the digital integrator into a voltage, a converter that converts the voltage output from the DAC into a current, and a coil that generates the magnetic field received by the SQUID, based on the current output from the converter. A calculating device calculates a digital value indicating a flux quantum based on the digital value output from the ADC when the ADC converts the periodically changing voltage output from the SQUID upon receiving the magnetic field generated by a current that is obtained by converting a voltage generated by a voltage generator.

A memory device includes a first ferromagnetic layer, an insulating layer above the first ferromagnetic layer, a second ferromagnetic layer above the insulating layer, a capping layer on an upper surface of the second ferromagnetic layer, and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode includes one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.

A resettable bipolar switch sensor is disclosed which comprises a bipolar magnetic hysteresis switch sensor, a reset coil, an ASIC switch circuit and a power reset circuit. The bipolar magnetic hysteresis switch sensor comprises a substrate and a magnetoresistive sensing arm located on the substrate. The magnetoresistive sensing arm is of a two-port structure composed of one or more magnetoresistive sensing unit strings arranged in series, parallel, or series-parallel. The magnetization direction of a free layer of a TMR magnetoresistive sensing unit is determined by an anisotropy field Hk, and together with the magnetization direction of a reference layer and the applied magnetic field, it can orient in an N or S direction. The reset coil is located between the substrate along with the magnetoresistive sensing unit, or it is located on a lead frame below the substrate. The direction of the reset magnetic field is either N or S. The ASIC switch circuit comprises a biasing circuit module, a reading circuit module, and an output circuit module. The power reset circuit is connected to the reset coil. This device has the advantages of low power consumption and small size in addition to the capability to set initial state of the switch sensor.

Described is an invention that adds capacitive sensing ability with a single magnetic field sensor location or distributed within an array of surfaces of the sensor. The capacitive sensing can be achieved by modifying a classic Hall effect sensor or putting separate capacitive sensor plates in close proximity to the hall effect sensor.

A magnetoresistive memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack may include a ferroelectric material layer and a metamagnetic tunnel junction containing a metamagnetic material layer, an insulating barrier layer, and a metallic material layer. Alternatively, the layer stack may include a multiferroic material layer, the metamagnetic material layer, the insulating barrier layer, and a reference magnetization layer.

A magnetoresistive memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack may include a ferroelectric material layer and a metamagnetic tunnel junction containing a metamagnetic material layer, an insulating barrier layer, and a metallic material layer. Alternatively, the layer stack may include a multiferroic material layer, the metamagnetic material layer, the insulating barrier layer, and a reference magnetization layer.

An electronic device is disclosed. The electronic device includes a device magnet designed to magnetically couple with an accessory device magnet. The electronic device further includes a display assembly and a magnetic field sensor configured to detect the accessory device magnet, thereby providing an indication that the accessory device is covering the display assembly. The electronic device further includes a shunt assembly designed to reduce the magnitude of the magnetic field of the device magnet, as determined by the magnetic field sensor, while allowing the magnetic field from the accessory device to sufficiently reach the magnetic field sensor. As such, the magnetic field sensor can be placed near the device magnet without triggering the magnetic field sensor. The electronic device may further include a microphone. Communication between the microphone and an integrated circuit can cease based on the magnetic field sensor detecting the accessory device magnet.

A component identification system is disclosed. The component identification system may include a sensor system that includes a first Hall-effect switch configured to provide a first output signal corresponding to a state of the first Hall-effect switch, and a second Hall-effect switch configured to provide a second output signal corresponding to a state of the second Hall-effect switch. The sensor system may be configured to provide a single output signal that is based on the first output signal and the second output signal and indicates a combined state of the first Hall-effect switch and the second Hall-effect switch. The component identification system may include a component that is to be identified. The component may include a first magnet configured to affect the state of the first Hall-effect switch and a second magnet configured to affect the state of the second Hall-effect switch.

A component identification system is disclosed. The component identification system may include a sensor system that includes a first Hall-effect switch configured to provide a first output signal corresponding to a state of the first Hall-effect switch, and a second Hall-effect switch configured to provide a second output signal corresponding to a state of the second Hall-effect switch. The sensor system may be configured to provide a single output signal that is based on the first output signal and the second output signal and indicates a combined state of the first Hall-effect switch and the second Hall-effect switch. The component identification system may include a component that is to be identified. The component may include a first magnet configured to affect the state of the first Hall-effect switch and a second magnet configured to affect the state of the second Hall-effect switch.