A focal-plane array includes an array of pixels. Each pixel includes an avalanche-type diode on a first layer, a read-out circuit (ROIC) on a second layer, and a power-supply circuit on a middle layer stacked between the first layer and the second layer. Since each pixel includes the avalanche-type diode, the ROIC, and the power-supply circuit on different layers circuitry for each pixel is in a top-down footprint of the pixel. Thus a consistent bias voltage to each pixel, decouples the avalanche-type diodes of the different pixels to eliminate crosstalk between adjacent pixels, and allows for individual control of each pixel.

A lightweight, inexpensive LADAR sensor incorporating 3-D focal plane arrays is adapted specifically for modular manufacture and rapid field configurability and provisioning. The sensor generates, at high speed, 3-D image maps and object data at short to medium ranges. The techniques and structures described may be used to extend the range of long range systems as well, though the focus is on compact, short to medium range ladar sensors suitable for use in multi-sensor television production systems and 3-D graphics capture and moviemaking. 3-D focal plane arrays are used in a variety of physical configurations to provide useful new capabilities.

A lightweight, inexpensive LADAR sensor incorporating 3-D focal plane arrays is adapted specifically for modular manufacture and rapid field configurability and provisioning. The sensor generates, at high speed, 3-D image maps and object data at short to medium ranges. The techniques and structures described may be used to extend the range of long range systems as well, though the focus is on compact, short to medium range ladar sensors suitable for use in multi-sensor television production systems and 3-D graphics capture and moviemaking. 3-D focal plane arrays are used in a variety of physical configurations to provide useful new capabilities.

It is intended to promote enhancement of performance of acquiring a depth image. A depth image acquiring apparatus includes a light emitting diode, a TOF sensor, and a filter. The light emitting diode irradiates modulated light toward a detection area becoming an area in which a depth image is to be acquired to detect a distance. The TOF sensor receives incident light into which the light irradiated from the light emitting diode is reflected by an object lying in the detection area to become, thereby outputting a signal used to produce the depth image. The filter passes more light having a wavelength in a predetermined pass bandwidth than light having a wavelength in a pass bandwidth other than the predetermined pass bandwidth of the light made incident toward the TOF sensor. In this case, at least one of the light emitting diode, the TOF sensor, or arrangement of the filter is controlled in accordance with a temperature of the light emitting diode or the TOF sensor. The present technique, for example, can be applied to a system for with international search report acquiring a depth image by using a TOF system.

It is intended to promote enhancement of performance of acquiring a depth image. A depth image acquiring apparatus includes a light emitting diode, a TOF sensor, and a filter. The light emitting diode irradiates modulated light toward a detection area becoming an area in which a depth image is to be acquired to detect a distance. The TOF sensor receives incident light into which the light irradiated from the light emitting diode is reflected by an object lying in the detection area to become, thereby outputting a signal used to produce the depth image. The filter passes more light having a wavelength in a predetermined pass bandwidth than light having a wavelength in a pass bandwidth other than the predetermined pass bandwidth of the light made incident toward the TOF sensor. In this case, at least one of the light emitting diode, the TOF sensor, or arrangement of the filter is controlled in accordance with a temperature of the light emitting diode or the TOF sensor. The present technique, for example, can be applied to a system for with international search report acquiring a depth image by using a TOF system.

A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.

A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.

Disclosed is a time-of-flight sensing apparatus and method. In one embodiment, a system for time-of-flight (TOF) sensing, comprising: a detector array comprising a plurality of single-photon avalanche detectors (SPADs); and a control circuit comprising at least two digital control arrays coupled to the detector array, a counter array coupled to the at least two digital control arrays, and a logical control unit coupled to the counter array and the at least two digital control arrays, wherein the detector array is configured to receive at least one reflected light pulse from a target, wherein a first digital control array, the counter array, and the logical control unit of the control circuit are configured to receive at least one avalanche pulses from each of the plurality of SPADs to determine a first distance between the detector array and the target in a first TOF mode, and wherein a second digital control array, the counter array, and the logical control unit of the control circuit are configured to receive the at least one avalanche pulse from the each of the plurality of SPADs to determine a second distance between the detector array and the target in a second TOF mode.

An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.