Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

An apparatus for detecting X-ray, comprising an X-ray absorption layer comprising an electrode, an electronics layer and a wall sealing a space among electrical connections between the X-ray absorption layer and the electronics layer. The electronics layer comprises: a first and second voltage comparators configured to compare a voltage of an electrode to a first and second thresholds respectively; a counter configured to register a number of X-ray photons absorbed by the X-ray absorption layer; and a controller configured to: start a time delay from a time at which an absolute value of the voltage equals or exceeds an absolute value of the first threshold; activate the second voltage comparator during the time delay; cause the number registered by the counter to increase by one, if, during the time delay, an absolute value of the voltage equals or exceeds an absolute value of the second threshold.

A nuclear reaction detection device 100 includes a semiconductor memory 100 arranged in an environment in which radiation is incident, a position information storage unit 210 that stores spatial position information of a semiconductor element in the semiconductor memory 100, a bit position specifying unit 220 that detects that an SEU (Single Event Upset) has occurred in the semiconductor element included in the semiconductor memory 100, and specifies the semiconductor element in which the SEU has occurred, and a position calculating unit 230 that calculates a spatial position in which the SEU has occurred, based on the specified semiconductor element and the spatial position information.

Some embodiments include a system, comprising: a housing; an imaging array disposed within the housing; an imaging strip disposed within the housing; a first readout circuit coupled to the imaging array; a second readout circuit coupled to the imaging strip; and common electronics coupled to the first readout circuit and the second readout circuit and configured to generate image data in response to at least one of the first readout circuit and the second readout circuit.

A radiation imaging apparatus includes a pixel array, a bias line, a plurality of drive lines, and a driving unit configured to cyclically supply an ON voltage to the drive lines. The radiation imaging apparatus also includes an acquiring unit configured to acquire a plurality of signal values by acquiring a signal value representing a current flowing through the bias line at each of a plurality of times within a period in which the ON voltage is continuously supplied to at least one of the plurality of drive lines, and a processing unit configured to specify an outlier in the plurality of signal values and determine whether or not there is a radiation irradiation with respect to the pixel array based on a signal value among the plurality of signal values that is not an outlier, and without being based on the outlier.

Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

A nuclear reaction detection device 100 includes a semiconductor memory 100 arranged in an environment in which radiation is incident, a position information storage unit 210 that stores spatial position information of a semiconductor element in the semiconductor memory 100, a bit position specifying unit 220 that detects that an SEU (Single Event Upset) has occurred in the semiconductor element included in the semiconductor memory 100, and specifies the semiconductor element in which the SEU has occurred, and a position calculating unit 230 that calculates a spatial position in which the SEU has occurred, based on the specified semiconductor element and the spatial position information.

Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

A detection system for an x-ray microscopy system utilizes high bandgap, direct conversion x-ray detection materials. The signal of the x-ray projection is recorded in a spatial light modulator such as a liquid crystal (LC) light valve. The light valve is then read-out by a polarized light optical microscope. This configuration will mitigate the loss of light in the optical system over the current scintillator-optical microscope-camera detection systems.

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.