Patent classifications
G02B6/12004
Integrated photonic device with improved optical coupling
A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.
Mode converter for optical fiber-to-thin film lithium niobate coupling
An optical mode converter includes a silicon substrate and a silicon dioxide film deposited on a top surface of the silicon substrate. A lithium niobate waveguide positioned on the silicon dioxide film having a slab and a rib that both taper in a direction of beam propagation through the optical mode converter. A doped silicon dioxide waveguide is positioned on top of the lithium niobate waveguide and has a slab that tapers in the direction of the optical beam propagation through the optical mode converter. The optical mode converter expands an optical mode of the optical beam propagating through the optical mode converter from a first optical mode size to a second optical mode size.
FIBER-TO-WAVEGUIDE COUPLERS WITH ULTRA HIGH COUPLING EFFICIENCY AND INTEGRATED CHIP WAVEGUIDES INCLUDING THE SAME
An easy-to-fabricate and highly efficient single-mode optical fiber-to-single-mode optical waveguide coupler having relatively large horizontal and vertical alignment tolerances between the fiber and the waveguide coupler. The waveguide coupler also features ease of end-facet cleaving. The waveguide coupler can be used in ultra-broadband high coupling efficiency applications or other suitable applications. Single-mode on-chip waveguides incorporating such coupler(s) are also provided, as are methods of manufacturing the waveguide coupler and on-chip waveguide.
PHASE MODULATOR DEVICE AND METHOD
The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.
SYSTEMS AND METHODS FOR PHOTONIC CHIP COUPLING
Systems and methods for coupling photonic integrated subcircuits are described herein. The example system can include a first cartridge (4702) including a first photonic integrated subcircuit (4706) and a first alignment feature (4720, 4722). The system can include a second cartridge (4704) including a second photonic integrated subcircuit (4708) and a second alignment feature (4724, 4726), where the first alignment feature (4720, 4722) and the second alignment feature (4724, 4726) can be configured to enable alignment between the first photonic integrated subcircuit (4706) and the second photonic integrated subcircuit (4708). When the first photonic integrated subcircuit (4706) is aligned to the second photonic integrated subcircuit (4708), a first light path of the first photonic integrated subcircuit (4706) can be optically coupled to a second light path of the second photonic integrated subcircuit (4708).
SOLID-STATE DEVICE
A solid-state device, and use and formation thereof. The device includes a light emitter (102) that emits light with abeam propagation direction and includes an emitter epitaxial layer stack (940); a light routing medium (103) in optical communication with the light emitter; and a light detector (104) in optical communication with the light routing medium, which detects light emitted by the light emitter and includes a detector epitaxial stack (945). The light emitter and detector are monolithically formed on a semiconductor substrate. The emitter and detector epitaxial layer stacks include different pluralities of layers of a single epitaxial layer stack. The beam propagation direction is either in-plane with the single epitaxial layer stack and the light detector detects light out of plane with the single epitaxial layer stack, or out of plane with the single epitaxial layer stack and the light detector detects light in plane with the single epitaxial layer stack.
MODE CONVERSION WAVEGUIDE SYSTEM
A method and mode conversion waveguide system for converting a mode of a light is provided. The light is sent through a single mode waveguide, wherein the light has a first mode while traveling through single mode waveguide. The light is sent from the single mode waveguide into a multimode interference region having connected to the single mode waveguide. The light is reflected with a cavity within the multimode interference region in a manner that causes the light to propagate away from the single mode waveguide. The light is output from multimode interference region, wherein the light has a second mode.
SELF-LIT DISPLAY PANEL
A self-lit display panel includes a photonic integrated circuit payer including an array of waveguides and an array of out-couplers for out-coupling portions of the illuminating light through pixels of the panel. The self-lit display panel may include a transparent electronic circuitry layer backlit by the photonic integrated circuit layer; the two layers may be on a same substrate or on opposed substrates defining a cell filled with an electro-active material. The configuration allows for chief ray engineering, zonal illuminating, and separate illumination with red, green, and blue illuminating light.
HIGH BANDWIDTH PHOTONIC INTEGRATED CIRCUIT WITH ETALON COMPENSATION
A photonic integrated circuit device can comprise one or more layers having different refraction indices that cause optical coupling issues and losses from layer variations. A film of material can be applied to a layer of the photonic integrated circuit to avoid the issues to increase the optical bandwidth of the photonic integrated circuit device and decrease sensitivity to manufacturing and design processes.
Characterizing Integrated Photonics Devices
An integrated circuit comprises: at least one photonic layer that includes one or more optical waveguides; a first optical coupler that couples at least a first optical mode outside of the photonic layer to a first waveguide in the photonic layer; a photonic device that includes one or more ports in the photonic layer; a first multi-port optical coupler that includes three or more ports in the photonic layer, including a first port optically coupled to the first optical coupler, a second port optically coupled to a first port of the photonic device, and a third port optically coupled to a first optical reflector configured to send substantially all optical power emitted from the third port of the first multi-port optical coupler back to the third port of the first multi-port optical coupler.