An electro-optic element includes a first waveguide, which is a plasmonic waveguide, including a first core having a ferroelectric material and a cladding having a first cladding portion. The first cladding portion includes, at a first interface with the ferroelectric material, a first cladding material. The electro-optic element includes a first and a second electrode for producing an electric field in the ferroelectric material when a voltage is applied between the first and second electrodes, for modulating a real part of a refractive index of the ferroelectric material. The element includes, in addition, a crystalline substrate on which the ferroelectric material is epitaxially grown with zero or one or more intermediate layers present between the substrate and the ferroelectric material. The element may have a second waveguide, which is a photonic waveguide, including for enabling evanescent coupling between the first and second waveguides.

An optical device is described. At least a portion of the optical device includes ferroelectric non-linear optical material(s) and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.

Provided is an optical modulator including: a relay substrate; a first transmission line that is provided on a flat surface of the relay substrate, and transmits an electrical signal along the flat surface; a second transmission line that is provided separately from the relay substrate, is electrically connected to the first transmission line, and transmits, to the first transmission line, the electrical signal that has been input from an outer side in a direction that is not included in the flat surface; a modulation unit that modulates an optical signal by using the electrical signal that is transmitted by the first transmission line and the second transmission line; and a shield that shields a radiation component of the electrical signal that is radiated from the second transmission line.

The present invention relates to producing an electro-optical phase shifter such that it may be integrated into a front-end of line of an electronic-photonic integrated circuit. A conducting bottom layer with a first refractive index is provided. A center layer including a ferroelectric material and with a second refractive index is provided on top of a first region of the conducting bottom layer, such that the center layer is not on top of a second region of the conducting bottom layer. A conducting top layer with a third refractive index is provided on top of the center layer. The second refractive index is lower than the first refractive index and lower than the third refractive index, such that the conducting bottom layer, the center layer, and the conducting top layer form a slot waveguide. A first electrical connector which connects the second region of the conducting bottom layer with an upper layer is provided. Additionally, a second electrical connector which connects the conducting top layer with the upper layer is provided. A first electrode and a second electrode are provided in the upper layer such that the first electrode connects to the second region of the conducting bottom layer via the first electrical connector and the second electrode connects to the conducting top layer via the second electrical connector.

A Mueller-matrix microscope, including: a polarizing unit and an analyzing unit. The polarizing unit is configured to modulate a light beam emitted from an external light source module to yield a polarized light beam, and then to project the polarized light beam on the surface of a sample to be measured. The analyzing unit is configured to analyze the polarization state of a light beam reflected from the surface of the sample, to acquire information of the sample. The analyzing unit includes a polarization state analyzer (PSA) and a backside reflection suppression (BRS) unit. The PSA unit is configured to demodulate the polarization state of the light beam; and the BRS unit is configured to suppress the backside reflections from transparent substrate.

Stress applied to a wavelength conversion element is relaxed at the time of temperature control of the wavelength conversion element, and stable operation and improvement of long-term reliability of a wavelength conversion device are realized. A wavelength conversion device includes: a wavelength conversion element that receives excitation light and signal light and outputs wavelength-converted output signal light; a temperature control element that controls a temperature of the wavelength conversion element; an upper member that is provided between the wavelength conversion element and the temperature control element and transfers heat between the temperature control element and the wavelength conversion element; and a sheet-like adhesive sheet provided between the wavelength conversion element (and the upper member. At least a part of the adhesive sheet has a surface facing the wavelength conversion element adhered to the wavelength conversion element, and a surface facing the upper member adhere to the upper member.

The present invention relates to polymer stabilized nematic liquid crystal microlenses. The microlenses can be made from a nematic liquid crystal, a chiral dopant, a reactive monomer, and a photoinitiator. The microlenses can be prepared by spin coating a liquid crystal mixture onto an array including a nickel transmission electron microscope grid. The focal length of the microlens array can be tuned electrically.

An optical modulator includes an optical modulator chip configured to optically modulate an optical signal using an electrical signal input thereto; and a relay substrate configured to relay and couple the electrical signal to the optical modulator chip. The optical modulator chip includes a signal electrode and a ground electrode for the electrical signal, formed along a waveguide for the optical signal. One end of the optical modulator chip is arranged to face the relay substrate. An electrode connection portion coupling the electrical signal to the relay substrate by wire is provided at the one end. A distance between a tip of one end of the signal electrode in the electrode connection portion and the end of the optical modulator chip is less than a distance between a tip of an end of the ground electrode in the electrode connection portion and the end of the optical modulator chip.

A device includes a pair of electrodes and a dynamic material disposed between the pair of electrodes, the dynamic material including a crystalline microstructure configured to change between at least two states in response to a change in an electric field between the two electrodes. A material includes tetragonal lead magnesium niobate-lead titanate (PMN-PT) and at least one lanthanide series element. A method includes doping a lead magnesium niobate-lead titanate material with at least one lanthanide series element, and processing the PMN-PT material to form tetragonal PMN-PT. A further method includes forming a low refractive index nanostructured grating over a carrier substrate, forming a high refractive index layer over the low refractive index grating to produce a nanostructured coupling element, forming an adhesive layer over the nanostructured coupling element, and affixing the nanostructured coupling element to a high index waveguide.

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof more specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c, more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.