A display device including a blue light source (A), a wavelength conversion layer (B), and a light absorption layer (C), wherein the wavelength conversion layer (B) has a first wavelength conversion layer (B1) containing a compound (Q1) that absorbs blue and emits red light, and a second wavelength conversion layer (B2) containing a compound (Q2) that absorbs blue and emits green light, and the display device satisfies 0.7≤X1 and 0.7≤X2.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

A light source device is used to generate illumination light and includes a plurality of light emitting components, at least one first fluorescent part, and at least one second fluorescent part. Each light emitting component is used to emit light. The first fluorescent part is disposed on at least one of the light emitting components and able to convert the light to first white light having a first color temperature. The second fluorescent part is disposed on at least one of the other light emitting components and able to convert the light to second white light having a second color temperature. The illumination light includes the first white light and the second white light, where the maximum difference between the first color temperature and the second color temperature is greater than or equal to 2000K.

Embodiments described herein relate to nanostructured trans-reflective filters having sub-wavelength dimensions. In one embodiment, the trans-reflective filter includes a film stack that transmits a filtered light within a range of wavelengths and reflects light not within the first range of wavelengths. The film stack includes a first metal film disposed on a substrate having a first thickness, a first dielectric film disposed on the first metal film having a second thickness, a second metal film disposed on the first dielectric film having a third thickness, and a second dielectric film disposed on the second metal film having a fourth thickness.

An electronic device includes a light guide plate including three grating parts. A first grating part is configured to receive the emitted light through a light incident surface of the first grating part, diffract the emitted light to form a first light, and enable the first light to enter a second grating part. The second grating part is configured to form, based on the first light, a second light propagated in the second grating part, and form, based on the second light, a third light entering a third grating part. The third grating part is configured to form, based on the third light, a fourth light propagated in the third grating part, form an emergent light based on the fourth light, and enable the emergent light to be emitted through a light emergent surface of the third grating part and enter a cover plate.

The present specification relates to a color conversion film, and a backlight unit and a display device, including the same.

The present application discloses a liquid crystal display panel and a method of manufacturing the same. The liquid crystal display panel includes a pixel area, and further includes: a glass substrate serving as a light guide plate; a reflective layer disposed on a side of the light guide plate; a grating structure disposed on a side of the light guide plate away from the reflective layer, and corresponding to the pixel area; a planarization layer disposed on a side of the grating structure away from the light guide plate; and a thin-film transistor layer disposed on a side of the planarization layer away from the light guide plate.

A downconversion film element comprises quantum dots and phosphor, wherein either (a) the quantum dots emit a peak red wavelength in a range from 615 to 660 nm and a FWHM of less than 50 nm, and the phosphor emits a peak green wavelength in a range from 515 to 555 nm and a FWHM of less than 80 nm and has an internal fluorescence quantum yield of 75% or greater or (b) the quantum dots emit a peak green wavelength in a range from 515 to 555 nm and a FWHM of less than 40 nm, and the phosphor emits a peak red wavelength in a range from 615 to 645 nm and a FWHM of less than 80 nm and has an internal fluorescence quantum yield of 75% or greater.

A display device includes a backlight and a display panel on the backlight. The backlight includes a light source to provide a first light, and an optical wavelength converter to receive the first light and emits a second light. The optical wavelength converter includes a light emitting part having a plurality of excitation light emitting bodies to be excited by receiving the first light, and thereby emit the second light, and a light absorbing part including a plurality of absorbers provided on the light emitting part to receive the second light and absorb a portion of the second light having a wavelength of about 550 nm to about 650 nm.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.