A system and a method of producing sub-millimeter scale particles are provided herein. The method includes providing a substrate that has a layer of photosensitive material thereon; exposing a portion of the layer to a structured beam of light that has a cross-sectional shape, and a cross-sectional size. The cross-sectional size of the structured beam of light at the layer of photosensitive material is smaller than a sub-millimeter scale particle. The method also includes moving the substrate or the beam of light relative to each other to follow a path for making additional exposures or continuous exposure to result in a discrete exposed pattern in the layer that corresponds to the particle being produced, and exposing the layer to the light; and processing the layer to remove unexposed material around the discrete exposed pattern and to separate the discrete exposed pattern from the layer to provide the sub-millimeter scale particle.

An exposure apparatus can mitigate the impact of fluctuations in the refractive index of ambient gas, and improve, for example, stage positioning accuracy. An exposure apparatus radiates an exposure illumination light to a wafer on a wafer stage through a projection optical system, and forms a prescribed pattern on the wafer, and comprises: a scale, which is provided to the wafer stage; a plurality of X heads, which detect information related to the position of the scale; a measurement frame that integrally supports the plurality of X heads and has a coefficient of linear thermal expansion that is smaller than that of the main body of the wafer stage (portions excepting a plate wherein the scale is formed); and a control apparatus that derives information related to the displacement of the wafer stage based on the detection results of the plurality of X heads.

Provided is an interferometer system that irradiates an object to be measured with measuring light to thereby measure the position of the object to be measured. The interferometer system includes a laser light source; an interferometer configured to separate laser light emitted from an emission opening of the laser light source into the measuring light and reference light; and an optical path protecting member configured to surround an optical axis such that the laser light passes through the inside thereof and of which one opening is in contact with the emission opening.

In a lithographic apparatus, a localized area of the substrate surface under a projection system is immersed in liquid. The height of a liquid supply system above the surface of the substrate can be varied using actuators. A control system uses feedforward or feedback control with input of the surface height of the substrate to maintain the liquid supply system at a predetermined height above the surface of the substrate.

The disclosure provides an arrangement for the thermal actuation of a mirror, in particular in a microlithographic projection exposure apparatus, as well as related methods and systems.

Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.

An exposure apparatus may include a laser light source capable of varying a wavelength of a laser beam that is emitted from the laser light source, a mask on which a pattern is formed, the pattern being configured to generate diffracted light by being irradiated with the laser beam, and a controller configured to control, in accordance with a distance between the mask and a substrate, the wavelength of the laser beam that is emitted from the laser light source, wherein the mask is irradiated with the laser beam emitted from the laser light source to perform proximity exposure on a surface of the substrate.

A liquid immersion lithography apparatus includes a projection system including an optical member of which an incidence side has a convex lens shape, the projection system being configured to project an image through a liquid on a workpiece, and a liquid immersion member arranged below the optical member, the liquid immersion member having a plurality of openings through which the liquid is allowed to flow. A material of which the optical member is made is more resistant to the liquid than a material of which the liquid immersion member is made.

A lithographic system includes an immersion type lithographic apparatus, which includes a support constructed and arranged to support a substrate, a projection system constructed and arranged to project a patterned beam of radiation onto a target portion of the substrate, a liquid confinement structure configured to at least partially fill a space between the projection system and at least one of the substrate and support with an immersion liquid, a liquid supply system arranged to provide the immersion liquid to the liquid confinement structure, and a cleaning liquid supply system arranged to provide a cleaning liquid to a surface of the lithographic apparatus that comes into contact with the immersion liquid. The system includes a switch to provide the cleaning liquid directly to the liquid confinement structure and to provide the immersion liquid indirectly to the liquid confinement structure via a liquid purification system.

A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.