A method of peak power management (PPM) is provided for two NAND memory dies. each NAND memory die comprises a PPM circuit having a PPM contact pad held at an electric potential common between the two NAND memory dies. The method includes the following steps: detecting the electric potential during a first peak power check (PPC) routine for the first NAND memory die; driving the electric potential to a second voltage level if the detected electric potential is at a first voltage level higher than the second voltage level; generating a pausing signal in the electric potential to pause a second PPC routine for the second NAND memory die if no pausing signal is detected; and generating a resuming signal in the electric potential to resume the second PPC routine for the second NAND memory die after the first NAND memory die completes a first peak power operation.

A system for providing system level sleep state power savings includes a plurality of memory channels and corresponding plurality of memories coupled to respective memory channels. The system includes one or more processors operative to receive information indicating that a system level sleep state is to be entered and in response to receiving the system level sleep indication, moves data stored in at least a first of the plurality of memories to at least a second of the plurality of memories. In some implementations, in response to moving the data to the second memory, the processor causes power management logic to shut off power to: at least the first memory, to a corresponding first physical layer device operatively coupled to the first memory and to a first memory controller operatively coupled to the first memory and place the second memory in a self-refresh mode of operation.

Provided are electronic devices and methods for power reduction in systems with multiple memory ranks. The electronic device includes a memory system including first and second memory ranks and a memory controller connected to the memory system and configured to control power of the memory system. The memory controller being configured to cause the first memory rank to enter an idle power down (IPD) state during memory access in which a data toggle time without a data bubble is equal to or greater than an IPD minimum gain duration in another bank access for the second memory rank.

A memory chip includes at least two memory blocks. In a method for controlling power supply for the memory blocks of the memory chip, each memory block receives a command for switching to standby mode. The commands are issued, for example by a processor, separately for each memory block in order to be able to individually place the memory block in standby mode.

A circuit comprises a power controller, a real-time clock (RTC) sub-system, and a processing sub-system. The RTC sub-system includes an alarm register storing a predetermined time for a task, and provides an early warning countdown and a scheduled event signal. The processing sub-system includes a processor, a preemptive wakeup circuit, and a component coupled to the processor and configured to execute the task with the processor. The preemptive wakeup circuit comprises a selector logic circuit, a comparator, and a wakeup initiation circuit. The selector logic circuit receives latency values indicative of wakeup times for a clock generator and the component, and outputs a longest wakeup time to the comparator, which indicates when the early warning countdown and the longest wakeup time are equal. The wakeup initiation circuit generates a clock request and disables the sleep mode indicator. The power controller provides a clock signal and wakes the component.

A controller controls a memory device. The controller includes a buffer buffering one or more data chunks received from a host until the one or more data chunk is stored in the memory device, and a processor sorting and storing, according to data types of the one or more data chunks, the one or more data chunks buffered in the buffer in a plurality of memory regions of the memory device in a normal operation, the plurality of memory regions respectively corresponding to a plurality of data types. In response to a sudden power-off (SPO), the processor generates map data indicating a relationship between the one or more data chunks and the plurality of memory regions, generates a data string by merging the one or more data chunks, and stores the data string and the map data in a temporal memory region of the memory device.

An electronic device has a memory functional block that includes memory circuits and a memory physical layer (PHY) functional block with core logic that controls operations in the memory functional block, a memory PHY voltage regulator, a system voltage regulator, and a controller. The electronic device also includes a switch having an input coupled to an output of the memory PHY voltage regulator, another input coupled to an output of the system voltage regulator, and an output coupled to a power supply input of the core logic. The controller sets the switch so that electrical power is provided from the memory PHY voltage regulator to the core logic in a full power operating state. The controller sets the switch so that electrical power is provided from the system voltage regulator to the core logic in one or more low power operating states.

The invention introduces a non-transitory computer-readable storage medium for adjusting operating frequencies when executed by a processing unit of a device, containing program code to: collect an interface-activity parameter comprising information about data transmissions on a host access interface and/or a flash access interface; select one from multiple frequencies according to the interface-activity parameter; and drive a clock generator to output a clock signal at the selected frequency, thereby enabling the host access interface and/or the flash access interface to operate at an operating frequency.

A temperature control method, a memory storage apparatus, and a memory control circuit unit are disclosed. The method includes: detecting a system parameter of the memory storage apparatus, and the system parameter reflects wear of a rewritable non-volatile memory module in the memory storage apparatus; determining a temperature control threshold value according to the system parameter; and performing a temperature reducing operation in response to a temperature of the memory storage apparatus reaching the temperature control threshold value to reduce the temperature of the memory storage apparatus.

A processing device in a memory sub-system detects a preemptive power loss condition in the memory sub-system and, in response, causes operations of a local media controller associated with a memory device in the memory sub-system to be suspended, wherein responsive to being suspended, the local media controller to perform power loss handling operations to complete a subset of a plurality of pending memory access operations, and wherein to perform the power loss handling operations, the local media controller to complete the subset of the plurality of pending memory access operations for which an acknowledgment signal has been sent to a requestor. The processing device further detects a full power loss and restore condition in the memory sub-system, responsive to detecting the full power loss and restore condition, initializes the memory device and causes operations of the local media controller to resume.