Disclosed is an operation method of a memory device which performs a self-refresh operation. The method includes receiving a deep-sleep mode enter command from a memory controller, changing a magnitude of an internal voltage of the memory device from a first voltage to a second voltage smaller than the first voltage, in response to the deep-sleep mode enter command, and entering a self-refresh mode under control of the memory controller, and the internal voltage is maintained at the second voltage during the self-refresh mode.

A processing device of a memory sub-system is configured to sort a plurality of blocks of the memory device; divide the sorted plurality of blocks into a plurality of block segments; scan a first block at a first boundary of a first block segment of the plurality of block segments; scan a second block at a second boundary of the first block segment; identify, based on a scanning result of the first block, a first voltage bin associated with the first block; identify, based on a second scanning result of the second block, a second voltage bin associated with the second block; and responsive to determining that the first voltage bin matches the second voltage bin, assign the first voltage bin to each block of a subset of the plurality of blocks assigned to the first block segment.

Embodiments relate to the field of storage technologies. The method is applied to a flash device whose first physical storage space stores a data block at a first security level and a data block at a second security level and whose second physical storage space stores a data block at a second security level. The method includes: receiving a data write request used to request to write target data, and obtaining a security level of the target data; and writing the target data into the first physical storage space if the security level of the target data is the first security level; or writing the target data into the second physical storage space or writing the target data into the second physical storage space and the first physical storage space if the security level of the target data is the second security level.

According to the embodiments, an external storage device switches to an interface controller for supporting only a read operation of nonvolatile memory when a shift condition for shifting to a read only mode is met. A host device switches to an interface driver for supporting only the read operation of the nonvolatile memory when determining to recognize as read only memory based on information acquired from the external storage device.

Technologies are provided for increasing electronic noise of a memory device during an initialization of the memory device and performing initialization operations, such as memory access centering operations, for the memory device while the electronic noise of the memory device is increased. The electronic noise of the memory device can be increased by increasing a level of ground bounce (or ground noise) during a training phase of the memory device. Increasing the ground noise can comprise increasing an inductance across a memory of the memory device during the training phase. The inductance can be increased by deactivating one or more ground connections of the memory during the memory’s training phase. Additionally or alternatively, the inductance can be increased by activating one or more inductors connected to one or more ground connections of the memory during the memory’s training phase.

A processing device in a memory system receives requests to perform a plurality of memory access operations at a memory device configured with a zone namespace having a plurality of zones, the memory device comprising a plurality of planes, wherein each zone of the plurality of zones is associated with a respective plane of the plurality of planes. The processing device further concurrently performs the plurality of memory access operations on data stored in different zones of the plurality of zones, wherein the different zones are associated with different planes of the plurality of planes.

A memory controller controls a memory device including memory blocks, and can equalize wear levels of cores for controlling memory devices. The memory controller includes: cores for controlling the zones; a reset information controller for generating reset count values representing a number of reset requests input with respect to the zones, in response to a reset request, and generating reset count sum values obtained by summing reset count values of zones controlled by each of the cores; and a wear level manager for controlling the cores such that a core that is different from a first core having a highest reset count sum value from among the cores controls some of zones controlled by the first core according to whether a difference value between the highest reset count sum value and a lowest reset count sum value from among the reset count sum values exceeds a threshold difference value.

Methods, systems, and computer readable media can be operable to facilitate the updating of memory at a device based upon a custom command file. In embodiments, update or configuration codes or data may be delivered to a device within a download package, and the download package may include a command file. The command file may identify one or more operations that are to be carried out on the memory of the device, and each respective one of the one or more operations may be associated with a subset or portion of the memory of the device. The device may identify the one or more operations and the one or more associated memory areas from the command file, and the device may carry out the one or more operations on only those areas of the device memory that are identified from the command file as being associated with the operations.

A recording control apparatus configured to access a plurality of recording media, includes a control unit configured to set a temperature threshold of each of first and second recording media, a functional restriction being imposed on the recording medium at the temperature threshold, wherein the control unit is configured to, in recording data read from the first recording medium into the second recording medium, make a first setting for the first recording medium and a second setting for the second recording medium, where the first setting includes setting the temperature threshold of the recording medium at which the functional restriction is imposed on the recording medium to a default value of the recording medium, and the second setting includes setting the temperature threshold of the recording medium at which the functional restriction is imposed on the recording medium to a value greater than the default value of the recording medium.

A method includes receiving signaling indicative of performance of a shutdown operation involving a memory device to a controller resident on the memory device; initiating a power off sequence in response to the received signaling, wherein the power off sequence includes execution of instructions corresponding to a plurality of routines; and writing data comprising respective shutdown signatures associated with execution of the plurality of routines to a media associated with the memory device upon completion of each of one or more of the plurality of routines, wherein the media is bit-addressable or byte-addressable.