A PMR writer with a true one turn design is disclosed with a driving coil above the main pole (MP) but where a bucking coil below the MP is replaced by a dummy metal layer or fully removed to substantially enhance the return field to the trailing shield. A non-double write shield scheme is employed where the leading loop for magnetic flux return is terminated at the leading shield. A tapered bottom yoke (tBY) contacts the MP bottom surface and has a tapered front side at height tBYd from the air bearing surface. Bottom yoke (BY) is below the tBY and has a front side at height BYd where BYd>tBYd. Reader-writer separation is reduced by 1-2 microns when the bucking coil is fully removed. Wide adjacent track erasures are controlled with a high damping material in one or more of the leading, side and trailing shields.

The present disclosure describes aspects of pulse-based writing for magnetic storage media. In some aspects, a pulse-based writer of magnetic storage media determines that a string of data bits having a same polarity corresponds to a magnet longer than a threshold associated with a magnetic media writer. The pulse-based writer inserts, into the string of data bits, a transition to a polarity opposite to the same polarity of the string of data bits. The string of data bits including the inserted transition is then transmitted to the magnetic media writer to cause a write head of the writer to pulse while writing the magnet to magnetic storage media. Various aspects may also implement a control signal to mask a transition or control polarity of the magnetic media writer. By so doing, magnets may be written to the magnetic storage media more efficiently or with less distortion to neighboring tracks.

The present disclosure describes aspects of pulse-based writing for magnetic storage media. In some aspects, a pulse-based writer of magnetic storage media determines that a string of data bits having a same polarity corresponds to a magnet longer than a threshold associated with a magnetic media writer. The pulse-based writer inserts, into the string of data bits, a transition to a polarity opposite to the same polarity of the string of data bits. The string of data bits including the inserted transition is then transmitted to the magnetic media writer to cause a write head of the writer to pulse while writing the magnet to magnetic storage media. Various aspects may also implement a control signal to mask a transition or control polarity of the magnetic media writer. By so doing, magnets may be written to the magnetic storage media more efficiently or with less distortion to neighboring tracks.

The present disclosure describes aspects of pulse-based writing for magnetic storage media. In some aspects, a pulse-based writer of magnetic storage media determines that a string of data bits having a same polarity corresponds to a magnet longer than a threshold associated with a magnetic media writer. The pulse-based writer inserts, into the string of data bits, a transition to a polarity opposite to the same polarity of the string of data bits. The string of data bits including the inserted transition is then transmitted to the magnetic media writer to cause a write head of the writer to pulse while writing the magnet to magnetic storage media. Various aspects may also implement a control signal to mask a transition or control polarity of the magnetic media writer. By so doing, magnets may be written to the magnetic storage media more efficiently or with less distortion to neighboring tracks.

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.