A memory subsystem enables a refresh abort command. A memory controller can issue an abort for an in-process refresh command sent to a memory device. The refresh abort enables the memory controller to more precisely control the timing of operations executed by memory devices in the case where a refresh command causes refresh of multiple rows of memory. The memory controller can issue a refresh command during active operation of the memory device, which is active operation refresh as opposed to self-refresh when the memory device controls refreshing. The memory controller can then issue a refresh abort during the refresh, and prior to completion of the refresh. The memory controller thus has deterministic control over both the start of refresh as well as when the memory device can be made available for access.

Examples are disclosed for determining a logical address of one or more victim rows of a volatile memory based on a logical address of an aggressor row and address translation schemes associated with the volatile memory. Other examples are described and claimed.

A memory module may include a first memory device configured to be controlled by a host memory controller, to transmit/receive data to/from the host memory controller in a first mode, and to transmit/receive data to/from a module memory controller in a second mode, a second memory device configured to be controlled by the module memory controller and to transmit/receive data to/from the module memory controller in the second mode, and the module memory controller configured to monitor control of the first memory device by the host memory controller, to exchange data such that the data is transmitted/received between the first memory device and the second memory device in the second mode, and to control the second memory device.

Methods and apparatus related to supporting both DDR (Double Data Rate) and NVM (Non-Volatile Memory) DIMM (Dual Inline Memory Module) on the same memory slot are described. In one embodiment, a DIMM comprises volatile memory and non-volatile memory, and data is communicated with the volatile memory and the non-volatile memory via a single memory slot. Other embodiments are also disclosed and claimed.

Embodiments may be generally direct to apparatuses, systems, method, and techniques to determine a configuration for a plurality of connectors, the configuration to associate a first interconnect protocol with a first subset of the plurality of connectors and a second interconnect protocol with a second subset of the plurality of connectors, the first interconnect protocol and the second interconnect protocol are different interconnect protocols and each comprising one of a serial link protocol, a coherent link protocol, and an accelerator link protocol, cause processing of data for communication via the first subset of the plurality of connectors in accordance with the first interconnect protocol, and cause processing of data for communication via the second subset of the plurality of connector in accordance with the second interconnect protocol.

Disclosed is a memory package. The memory package includes a nonvolatile memory chip, a volatile memory chip of which an access speed is faster than an access speed of the nonvolatile memory chip, and a logic chip for performing a refresh operation about the volatile memory chip in response to a refresh command from an external device, and migrating at least a portion of data stored in the nonvolatile memory chip to the volatile memory chip when the refresh operation is performed.

A nonvolatile memory module includes volatile memory devices; a nonvolatile memory device; and a controller suitable for backing up data stored in the volatile memory devices or restoring data backed up in the nonvolatile memory device, according to a fail/recovery of power of the host, the controller including a power-down interrupt logic which interrupts a backup operation when the power of the host is recovered while performing the backup operation, the power-down interrupt logic including: a logic which determines whether sufficient erased blocks exist in the nonvolatile memory device; a logic which erases a new block when the sufficient erased bocks do not exist; and an interrupt backup logic which backs up a volatile memory device having data corresponding to the erased block, when a fail in the power of the host is detected or a backup operation is instructed from the host.

A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage element, data stored in a first storage circuit corresponding to a nonvolatile memory can be held by a first capacitor provided in a second storage circuit. With the use of a transistor in which a channel is formed in an oxide semiconductor layer, a signal held in the first capacitor is held for a long time. The storage element can accordingly hold the stored content (data) also in a period during which the supply of the power supply voltage is stopped. A signal held by the first capacitor can be converted into the one corresponding to the state (the on state or off state) of the second transistor and read from the second storage circuit. Consequently, an original signal can be accurately read.

A memory module includes an emergency power supplier, a plurality of ranks each including one or more volatile memories, a non-volatile memory, and a controller suitable for backing up data of the ranks into the non-volatile memory by using the emergency power supplier during a power failure, wherein the ranks are sequentially backed up, and while one rank is backed up among the ranks, the other ranks are controlled in a self-refresh mode.

A memory device comprises a first selector and a storage capacitor in series with the first selector. A second selector is in parallel with the storage capacitor coupled between the first selector and zero volts. A plurality of memory devices form a 2S-1C cross-point DRAM array with 4F2 or less density.