A method for simulating alternating current from low power direct current and determining tissue impedance of a biological load.

A semiconductor device with a novel structure is provided. The semiconductor device includes a sensor, an amplifier circuit to which a sensor signal of the sensor is input, a sample-and-hold circuit that retains a voltage corresponding to an output signal of an amplifier input to the sample-and-hold circuit, an analog-to-digital converter circuit to which an output signal of the sample-and-hold circuit corresponding to the voltage is input, and an interface circuit. The interface circuit has a function of switching and controlling a first control period in which the sensor signal is input to the amplifier circuit and an output signal of the amplifier circuit is retained in the sample-and-hold circuit and a second control period in which a digital signal obtained by output of the voltage retained in the sample-and-hold circuit to the analog-to-digital converter circuit is output to the interface circuit. In the first control period, the analog-to-digital converter circuit is switched to stop output of the digital signal. The first control period is longer than the second control period.

A charge pump apparatus includes a first charge pump system, a second charge pump system, a switch transistor, and a voltage regulation circuit. The first charge pump system converts a first supply voltage into a first boost voltage. The second charge pump system converts a second supply voltage into a second boost voltage. The switch transistor is coupled to the first charge pump system and the second charge pump system, and outputs an output voltage according to the second boost voltage. The switch transistor includes a control terminal receiving the second boost voltage, a first terminal receiving the first boost voltage, and a second terminal outputting the output voltage. The voltage regulation circuit successively adjusts a code of a voltage regulation signal according to the output voltage, in order to control the second charge pump system to successively adjust the second boost voltage according to the voltage regulation signal.

The exemplified disclosure presents a successive approximation register analog-to-digital converter circuit that comprises a two-step (e.g., two-stage) analog-to-digital converter (ADC) that operates a 1st-stage successive approximation register (SAR) in the continuous time (CT) domain (also referred to as a “1-st stage CTSAR”) that then feeds a sampling operation location in the second stage. Without a front-end sampling circuit in the 1st-stage, the exemplary successive approximation analog-to-digital converter circuit can avoid high sampling noise associated with such sampling operation and thus can be configured with a substantially smaller input capacitor size (e.g., at least 20 times smaller) as compared to conventional Nyquist ADC with a front-end sample-and-hold circuit.

Bias adjusting circuits (1_(2k-1), 1_2k) (where k is an integer equal to or greater than 1 and equal to or less than N, and N is an integer equal to or more than .sub.2) adjust DC bias voltage of at least one of clock signals such that a duty ratio, which is a ratio between a period in which a clock signal is High as to a clock signal and a period in which the clock signal is Low thereasto, becomes (2N-2k+1):(2k-1). Sampling circuits switch between a track mode in which an output signal tracks an input signal, and a hold mode in which a value of the input signal at a timing of switching from the track mode to the hold mode is held and output, in accordance with clock signals output from the bias adjusting circuits (2_1 to 2_2N).

A front-end sampling circuit includes a global switch, a local switch, and an auxiliary switch. The global switch is configured to be selectively turned on according to a first control signal, in order to transmit an input signal. The local switch is configured to be selectively turned on according to a second control signal, in order to transmit the input signal from the global switch to a node, wherein a storage circuit is coupled to the node to store the input signal. The auxiliary switch is configured to be selectively turned on according to a third control signal, in order to transmit the input signal to the node, in which a turn-off time point of the auxiliary switch is set to be the same or earlier than a turn-off time point of the global switch.

A sampling switch circuit, including an input node, which receives an input voltage signal to be sampled, a sampling transistor having gate, source and drain terminals, the source terminal connected to the input node, a capacitor, a current source configured to cause a defined current to flow therethrough and switching circuitry configured to alternate between a precharge configuration and an output configuration depending upon a clock signal. In the precharge configuration, the switching circuitry connects the capacitor into a current path between said current source and a first voltage reference node to form a potential difference across the capacitor which is dependent on the defined current. In the output configuration, the switching circuitry connects the capacitor between a second voltage reference node and the gate terminal of the sampling transistor so that a voltage level applied at the gate terminal of the sampling transistor is dependent on the defined current.

A follow-hold switch circuit comprising: a follower; a sampling sub-circuit for voltage sampling; a bootstrap-control sub-circuit, which provides a bootstrap voltage to the sampling sub-circuit when the circuit is in a following state; a sampling-switch-control sub-circuit, which provides a common-mode voltage to a bootstrap capacitor in the bootstrap-control sub-circuit when the circuit is in a holding state; the follower is connected to an output of the sampling sub-circuit; the sampling sub-circuit is connected to the bootstrap-control sub-circuit and the sampling-switch-control sub-circuit respectively through a sampling switch; the present disclosure can effectively improve the linearity of sampling switches.

A static random-access memory (SRAM) cell includes a first inverter and a second inverter being cross-coupled; a first access transistor that accesses an output of the first inverter under control of a word line; a second access transistor that accesses an output of the second inverter under control of the word line; a first passage transistor that passes a common-mode voltage, controlled by the output of the first inverter; a second passage transistor that passes an input signal, controlled by the output of the second inverter; and a capacitor switchably coupled to receive the common-mode voltage and the input signal through the first passage transistor and the second passage transistor respectively.

A charge pump apparatus including a first charge pump system, a second charge pump system, a switch transistor, and a voltage regulation circuit is provided. The first charge pump system converts a first supply voltage into a first boost voltage. The second charge pump system converts a second supply voltage into a second boost voltage. The switch transistor is coupled to the first charge pump system and the second charge pump system, and outputs an output voltage according to the second boost voltage. The switch transistor includes a control terminal receiving the second boost voltage, a first terminal receiving the first boost voltage, and a second terminal outputting the output voltage. The voltage regulation circuit controls the second charge pump system according to the output voltage to adjust the second boost voltage so that the output voltage approaches to a target output value.