A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

A mask blank glass substrate having a maximum value of a circularly averaged power spectral density of 1,000 nm.sup.4 or less at a spatial frequency of 0.1 μm.sup.−1 or more and 20 μm.sup.−1 or less, the maximum value being obtained by measuring a surface morphology of a region of 10 μm×10 μm with an atomic force microscope.

Disclosed is a method for producing a multilayer Laue lens. The object to provide a method for producing a wedged MLL that can be operated over a large range of wavelengths, and which preferably requires only a linear stage to adjust the positions of the lens as the wavelength is changed, is achieved by providing a lens blank comprising a substrate element having a flat upper surface extending in a plane defined by orthogonal axes x, y, z, wherein x and z extend in the plane and y extends normal to the plane, a layered structure deposited on the upper surface of the substrate element in such a way that at least two different materials are layered upon one another in an alternating manner, wherein the y-extension of the layered structure is constant along the x-axis and varies along the z-axis within a ramp section where the y-extension of the layered structure increases from a starting point, where first particles of material of the layered structure are deposited on the upper surface of the substrate element, to a saturation point, where a maximum y-extension of the layered structure is reached; and slicing a lens out of the lens blank by slicing through the ramp section in parallel to the y-axis but not parallel to the x- and z-axes.

Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

An X-ray apparatus includes an X-ray source embodied to generate X-rays; an X-ray detector; and an X-ray reflector. The X-ray reflector is embodied to reflect X-rays generated by the X-ray source such that the reflected X-rays hit the X-ray detector. The X-ray detector is in particular embodied to detect the X-rays. The X-ray apparatus can, on the one hand, enlarge the available space above a patient. Furthermore, focusing via the X-ray reflector enables the power of the X-ray source to be increased while retaining a constant spatial resolution or the spatial resolution to be improved while retaining a constant power of the X-ray source.

A method includes accelerating an electron bunch along a direction of propagation to a relativistic energy and partitioning the electron bunch by transmitting the electron bunch through a grating at the relativistic energy. The grating includes a plurality of alternating narrow portions and wide portions. The narrow portions have a first thickness in a direction substantially parallel to the direction of propagation of the electron bunch, and the wide portions have a second thickness in the direction substantially parallel to the direction of propagation of the electron bunch. The second thickness is greater than the first thickness. The method also includes generating a pulse of light using the partitioned electron bunch.

A multilayer Laue lens (MLL) that can be operated over a large range of wavelengths which is achieved by providing a lens blank comprising a substrate element extending in a plane defined by orthogonal axes x, y, z, with a layered structure deposited on the upper surface with at least two different materials that are layered upon one another in an alternating manner, wherein the y-extension of the layered structure is constant along the x-axis and varies along the z-axis within a ramp section where the y-extension of the layered structure increases from a starting point, where first particles of material of the layered structure are deposited on the upper surface of the substrate element, to a saturation point, where a maximum y-extension of the layered structure is reached; and slicing a lens out of the lens blank.

Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of reducing roughness are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate comprising a plurality of pairs of alternating layers comprising a first layer and a second layer, the first layer including a first element selected from the group consisting of Si, B, Al, Mg, Zr, Ba, Nb, Ti, Gd, Y, and Ca; and the second layer including a second element selected from the group consisting of Ru, Mo, Ta, Sb, Tc, Nb, Ir, Pt, and Pd. Some EUV mask blanks described herein include interface layer between the first layer and the second layer, the interface layer including an interface element selected from the group consisting of Si, B, C, Al, Mo, and Ru.

A method includes accelerating an electron bunch along a direction of propagation to a relativistic energy and partitioning the electron bunch by transmitting the electron bunch through a grating at the relativistic energy. The grating includes a plurality of alternating narrow portions and wide portions. The narrow portions have a first thickness in a direction substantially parallel to the direction of propagation of the electron bunch, and the wide portions have a second thickness in the direction substantially parallel to the direction of propagation of the electron bunch. The second thickness is greater than the first thickness. The method also includes generating a pulse of light using the partitioned electron bunch.

Disclosed herein is an x-ray interferometer for x-ray phase contrast imaging including an x-ray source, an x-ray source grating, two x-ray phase gratings, an x-ray analyzer grating and an x-ray detector. An alternative interferometer includes a periodically structured x-ray source, two x-ray phase gratings, an x-ray analyzer grating and an x-ray detector. The phase gratings are placed much closer to the x-ray detector than to the x-ray source and the image object is positioned upstream and close to the phase gratings to achieve high sensitivity and large field-of-view simultaneously.