Sensitivity of a magnetic sensor using the magnetic impedance effect is improved. A magnetic sensor includes: a non-magnetic substrate; a sensitive element provided on the substrate, including a soft magnetic material, having a longitudinal direction and a short direction, provided with uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect; and a protrusion part including a soft magnetic material and protruding from an end portion in the longitudinal direction of the sensitive element.

The present disclosure relates to a spin wave switch and a filter based on a magnonic crystal. According to one embodiment, a magnonic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer. The magnonic crystal device of the present disclosure may be used as a spin wave switch to effectively regulate and control the transmission coefficient of the spin wave, or may be used as a spin wave filter to filter the spin wave of a specific frequency.

A composition of matter consisting primarily of a stabilizing element and a transition metal oxide, wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions, and the composition of matter has a canted crystal structure.

A spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction intersecting with the spin-orbit torque wiring, wherein the first ferromagnetic layer comprises a plurality of ferromagnetic constituent layers and at least one inserted layer sandwiched between adjacent ferromagnetic constituent layers, and polarities of spin Hall angles of two layers, which sandwich at least one of the ferromagnetic constituent layers among the plurality of the ferromagnetic constituent layers, differ.

Disclosed herein are devices, systems, and methods that provide improved tunneling magnetoresistance (TMR) through the use of innovative device structures and heterostructure layers therein. Particularly, two or more magnetic layers form a heterostructure core of the switching device, with control of current passing through the heterostructure determined by an applied magnetic field that modifies the magnetization of the heterostructure from a ground magnetic state that is layered antiferromagnetic.

A reader includes a bearing surface and a free layer having a front surface that forms a portion of the bearing surface. The reader also includes a synthetic antiferromagnetic (SAF) structure below the free layer, the SAF structure has a narrow portion with a front surface that forms a portion of the bearing surface and a wide portion behind the narrow portion. The reader further includes an antiferromagnetic (AFM) layer in contact with the wide portion of the SAF structure. The SAF structure is configured to prevent switching from one magnetic state to another magnetic state in the wide portion under thermal fluctuations.

Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

Method for producing an integrated magnetic device with variable inductance, comprising: a) making of a piezoelectric element on a first substrate; b) making of a first electrically conductive element on a face of the piezoelectric element, and fastening of the ends of the piezoelectric element to a second substrate such that the piezoelectric element is arranged facing a cavity formed between the second substrate and the piezoelectric element, the first electrically conductive element being arranged in and/or against the second substrate or against the piezoelectric element; c) removing of the first substrate; d) making of a second electrically conductive element on another face of the piezoelectric element; and further comprising the making of an electrical and/or magnetic coupling of the first and second electrically conductive elements, and the making of a magnetic element arranged against and/or in the piezoelectric element and between the electrically conductive elements.

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

A magnetic-field-applying bias film exhibiting resistance to a high magnetic field has an exchange-coupled film including a permanent magnet layer and an antiferromagnetic layer stacked on the permanent magnet layer. The antiferromagnetic layer includes an X(CrMn) layer containing Cr, Mn, and one or two or more elements selected from the group consisting of platinum-group elements and Ni. The X(CrMn) layer has a first region relatively near to the permanent magnet layer and a second region relatively distant from the permanent magnet layer. Mn content in the first region is higher than Mn content in the second region.