A data writing method is configured such that a spin device includes a conducting portion extending in a first direction and a device portion stacked on one surface of the conducting portion and including a non-magnetic layer and a ferromagnetic layer, wherein an energy equal to or smaller than an energy represented by a predetermined relational expression (1) is applied in the first direction of the conducting portion when the pulse width of an applied pulse is t.

A data writing method is configured such that a spin device includes a conducting portion extending in a first direction and a device portion stacked on one surface of the conducting portion and including a non-magnetic layer and a ferromagnetic layer, wherein an energy equal to or smaller than an energy represented by a predetermined relational expression (1) is applied in the first direction of the conducting portion when the pulse width of an applied pulse is t.

Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.

Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.

The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and report on their rich dynamical properties. Micromagnetic simulations identify a wide range of automodulation frequencies including droplet oscillatory motion, droplet spinning, and droplet breather states. The droplet can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, and PMA-based domain-wall devices.