A film capacitor device includes a film stack with metal layers including adjacent metal layers in 180° opposite orientations in a direction in which the metal layers continuously extend, a first metal electrode, and a second metal electrode. The first metal electrode and the second metal electrode are on a pair of end faces of the film stack. The metal layer includes a common metal layer and a plurality of metal strips electrically connected to the common metal layer. At least one of a pair of end faces of the film stack in y-direction includes a recess continuously extending in a film stacking direction and separating the film stack from the first metal electrode.

A film capacitor includes a first film, a second film, a first electrode part, and a second electrode part. The first electrode part is disposed on a first film surface of the first film. The second electrode part is disposed on a second film surface of the first film or the second film. The first film surface has a first non-electrode part extending along a longitudinal direction of the first film surface. The second film surface has a second non-electrode part extending along a longitudinal direction of the second film surface. A first region having a light transmittance ranging from 30% to 80%, inclusive, is disposed between the first electrode part and the first non-electrode part. A second region having a light transmittance ranging from 30% to 80%, inclusive, is disposed between the second electrode part and the second non-electrode part. A width of each of the first region and the second region is less than or equal to 0.5 mm.

A film capacitor includes a first film, a second film, a first electrode part, and a second electrode part. The first electrode part is disposed on a first film surface of the first film. The second electrode part is disposed on a second film surface of the first film or the second film. The first film surface has a first non-electrode part extending along a longitudinal direction of the first film surface. The second film surface has a second non-electrode part extending along a longitudinal direction of the second film surface. A first region having a light transmittance ranging from 30% to 80%, inclusive, is disposed between the first electrode part and the first non-electrode part. A second region having a light transmittance ranging from 30% to 80%, inclusive, is disposed between the second electrode part and the second non-electrode part. A width of each of the first region and the second region is less than or equal to 0.5 mm.

A polypropylene film in which: during a heating process in thermomechanical analysis (TMA), the relationship (Ts−Tf)≤40° C. is satisfied by the temperature (Ts) (° C.) at which the film contracts by 0.1% in the longitudinal direction and the temperature (Tf) (° C.) at which the longitudinal shrink stress reaches 0.01 MPa; and the skewness (Ssk), which is the degree of bias of the protrusion shape, of at least one surface of the film is greater than −30 and less than 5. Thus provided is a polypropylene film that has excellent reliability and withstand voltage characteristics in high temperature environments when used in high voltage capacitors, that has a structure with excellent stability against heat and is suitable for applications in capacitors or the like to be used at high temperatures and high voltages, and that has excellent processability and does not wrinkle during a conveyance process including a vapor deposition process.

A film capacitor includes a main body portion shaped in a rectangular prism, and a pair of external electrodes. The main body portion includes dielectric films and metallic films which are laminated, and includes a pair of first faces opposed to each other, a pair of first side faces opposed to each other, and a pair of second side faces opposed to each other, the pair of first side faces connecting the pair of first faces, the pair of second side faces connecting the pair of first faces. The pair of external electrodes is located on the pair of first side faces. The second side faces are covered with an insulating cover layer. The film capacitor includes a grease-containing portion between the second side face and the insulating cover layer, the grease-containing portion including an insulating grease.

A power capacitor includes a body that defines an interior space; and at least one capacitive device in the interior space. The capacitive device includes a first electrode; and a second electrode separated from the second electrode. The power capacitor also includes a dielectric nanofluid in the interior space and between the first electrode and the second electrode, the dielectric nanofluid including: a base dielectric fluid; and nanoparticles dispersed in the base dielectric fluid.

A semiconductor structure includes a substrate containing first-type deep trenches and second-type deep trenches. The first-type deep trenches and the second-type deep trenches have lengthwise sidewalls that laterally extend along different directions. The semiconductor structure includes a capacitor structure, which includes a layer stack containing at least three metallic electrode layers interlaced with at least two node dielectric layers. Each layer within the layer stack includes a horizontally-extending portion that overlies a top surface of the substrate and vertically-extending portions that protrude downward into a respective one of the first-type deep trenches and second-type deep trenches. The different orientations of the lengthwise directions of the deep trenches reduces deformation of the semiconductor structure. Stress-relief structures may be formed in corner regions of the capacitor structure to provide structural reinforcement.

A film capacitor includes: a main body portion including a first metallized film including a first metal film on a first face of a first dielectric film, and a second metallized film including a second metal film on a second face of a second dielectric film; and external electrodes. The first or second dielectric film is located between the first and second metal films. The external electrodes are disposed on main body ends so as to be electrically connected with the first or second metal film. At least one of the first and second metal films includes a first portion which has a film thickness of 20 nm or more and is located in proximity to the main body ends, and the first portion includes a first groove extending in the first direction and being in contact with corresponding one of the main body ends.

A film capacitor includes: a main body portion including a first metallized film including a first metal film on a first face of a first dielectric film, and a second metallized film including a second metal film on a second face of a second dielectric film; and external electrodes. The first or second dielectric film is located between the first and second metal films. The external electrodes are disposed on main body ends so as to be electrically connected with the first or second metal film. At least one of the first and second metal films includes a first portion which has a film thickness of 20 nm or more and is located in proximity to the main body ends, and the first portion includes a first groove extending in the first direction and being in contact with corresponding one of the main body ends.

A film capacitor including a first dielectric film, a second dielectric film, a first internal electrode, a second internal electrode, a first external electrode, and a second external electrode. The first internal electrode includes a first connection portion, a first main electrode portion contiguous with the first connection portion and thinner than the first connection portion, and a first thin film portion extending from the first main electrode portion and thinner than the first main electrode portion. The second internal electrode includes a second connection portion and a second main electrode portion contiguous with the second connection portion and thinner than the second connection portion. The first main electrode portion opposes the second main electrode portion with the first dielectric film interposed therebetween and does not oppose the second connection portion, and the first thin film portion opposes the second connection portion with the first dielectric film interposed therebetween.