Described embodiments include a microelectromechanical system (MEMS) array comprising a first MEMS device that includes a first movable electrostatic plate elastically connected to a first structure, the first movable electrostatic plate having a first mass, a first fixed electrostatic plate, and a first drive circuit having a first drive output coupled to the first fixed electrostatic plate. There is a second MEMS device that includes a second movable electrostatic plate elastically connected to a second structure, the second movable electrostatic plate having a second mass that is different than the first mass, a second fixed electrostatic plate, and a second drive circuit having a second drive output coupled to the second fixed electrostatic plate.

An actuator is configured to include a first substrate that has a first conductive surface, which may be or include a first conductive electrode layer. The actuator also includes a second substrate that has a second conductive surface, which may be or include a second conductive electrode layer. The first and second conductive surfaces face toward each other across a compression space between the first and second substrates. A group of elastic support nodules span the compression space and separate the first and second conductive surfaces. The compression space is less than fully filled with solid elastic material and is configured to be compressed by relative movement of the first and second conductive surfaces toward each other in response to a voltage difference between the first and second conductive surfaces.

A MEMS switch includes: a housing, a switching assembly; a first actuation electrode, a first contact, a second contact, and a second actuation electrode. The switching device has a stress gradient along the thickness direction, such that in response to applying no voltage between the first actuation electrode and the second actuation electrode, the switching assembly contacts with the first contact. In response to applying a first voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly is spaced apart from both the first contact and the second contact. In response to applying a second voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly contacts with the second contact. The first voltage is smaller than the third voltage.

A power switch including input and output lines of characteristic impedance Z0, and a switching area connected serially between the input and output lines, the switching area being formed by N (integer >2) parallel conducting branchesand i belonging to {1, . . . , N}, each conducting branch having, from input to output lines of the switch, an input line portion with characteristic impedance Zbei in series with a switching circuit in series with an output line portion with characteristic impedance Zbsi, the switching circuit configured, in a first state, to block passage of a signal between the input and output line portions of the conducting branch and, in a second state, to transmit a signal between the input line portion and the output line portion of the conducting branch with a maximum reflection coefficient of 0.316, each of the characteristic impedances Zbei and Zbsi ranging from 0.75*N*Z0 to 1.35*N*Z0.

The switch contacts of a MEMS relay for a circuit interrupter are coated with a thin layer of liquid metal, and the MEMS relay is disposed in a sealed enclosure containing a gas medium. The gas medium provides an environmentally desirable alternative to sulfur hexafluoride (SF.sub.6), prevents oxidation of the liquid metal coating the relay switch contacts, and has sufficient dielectric strength in order to prevent current flow after separation of the switch contacts.

The present disclosure generally relates to the combination of MEMS intrinsic technology with specifically designed solid state ESD protection circuits in state of the art solid state technology for RF applications. Using ESD protection in MEMS devices has some level of complexity in the integration which can be seen by some as a disadvantage. However, the net benefits in the level of overall performance for insertion loss, isolation and linearity outweighs the disadvantages.

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

A micromechanical switch including a first substrate with a micromechanical functional layer in which a deflectable switching element is formed, and with a second substrate that is connected to the first substrate. The second substrate is situated at a distance above the switching element. The switching element includes an electrically conductive first contact area and is deflectable toward the second substrate. The second substrate, at an internal side, includes an electrically conductive second contact area that is situated in such a way that the switching element together with the first contact area may be applied to the second contact area in order to close an electrical contact. A method for manufacturing a micromechanical switch is also described.

A MEMS switch that includes a substrate with a first insulating layer and a silicon layer thereabove, a fixed portion and a movable switching portion being formed in the silicon layer.

A first metal layer is situated in recesses in the silicon layer at a side of the silicon layer facing away from the substrate, the first metal layer forming at least one switchable electrical contact between the fixed portion and the switching portion.

A method for manufacturing a MEMS switch including at least one embedded metal contact is also described.

A micro-electromechanical system (MEMS) device includes a moveable element within a cavity. The MEMS device also includes a first layer over the cavity, the first layer having a first hole and a second hole. The first hole has a first diameter. The second hole has a second diameter. The second diameter is larger than the first diameter, and the second hole is farther from the moveable element than the first hole. The first hole is sealed with a first dielectric material. The second hole is sealed with a second dielectric material. The cavity filled with a gas at a pressure of at least approximately 10 torr.