An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.

A corona/plasma treatment machine includes an array of electrodes arranged in a helix along a conductive central cylinder, allowing for the efficient surface treatment of materials with greater cross-sectional heights and widths than what is conventionally possible. The corona/plasma treatment machine further includes of a high frequency, high voltage power source, a dielectric, and a contact plate. The array of electrodes is driven using a motor and rotates about its longitudinal axis and is electrically isolated from its surroundings. When power is supplied to the electrode array, electrical energy is discharged from the tips of the electrodes near the contact plate and creates a plasma corona aura formed from the ionization of the surrounding air between the electrode array and the contact plate. A conveyor is positioned below the electrode array and configured to feed material through the plasma corona aura.

A charged particle beam apparatus according to this invention includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein; a plasma electrode that is provided apart from the electrode; a detection unit for detecting whether or not the plasma has been ignited in the plasma generation chamber; and a controller that controls, based on the result of detection by the detection unit, a voltage to be supplied to the plasma electrode in association with a predetermined pressure for supplying the raw gas.

Embodiments of systems, devices, and methods relate to an electrode standoff isolator. An example electrode standoff isolator includes a plurality of adjacent insulative segments positioned between a proximal end and a distal end of the electrode standoff isolator. A geometry of the adjacent insulative is configured to guard a surface area of the electrode standoff isolator against deposition of a conductive layer of gaseous phase materials from a filament of an ion source.

There is provided an insulating structure including a first end portion, a second end portion, a shaft portion connecting the first end portion and the second end portion to each other, and a surrounding portion including an inner surface facing an outer surface of the shaft portion and extending toward the second end portion from the first end portion. A gap between the outer surface of the shaft portion and the inner surface of the surrounding portion is configured to communicate with an outside. The first end portion, the second end portion, the shaft portion, and the surrounding portion are formed of electrical insulating material.

The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of the first set of rows. The plasma sources may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along a separate row of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with an aperture of the first plurality of apertures. The plasma sources may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.

An electrode arrangement for acting on a charged particle beam in a charged particle beam apparatus is described. The electrode arrangement includes a first electrode with a first opening for the charged particle beam; a first spacer element positioned in a first recess provided in the first electrode on a first electrode side for aligning the first electrode relative to a second electrode, the first spacer element having a first blind hole; a first conductive shield provided in the first blind hole; and a contact assembly protruding from the first electrode into the first blind hole for ensuring an electrical contact between the first electrode and the first conductive shield. Further, a contact assembly for such an electrode arrangement, a charged particle beam device with such an electrode arrangement, as well as a method of reducing an electrical field strength in an electrode arrangement are described.

A plasma processing apparatus generating plasma by electromagnetic waves supplied into a processing container to process a substrate, includes an upper electrode disposed in an upper portion of the processing container, a power supply member connected to the upper electrode to supply electromagnetic waves to the upper electrode, a first shield member and a second shield member configured to electrically shield the upper electrode and the power supply member, a ring-shaped insulating member provided between the upper electrode and the first shield member and between the upper electrode and the second shield member, and having a plurality of gas through-holes penetrating inside thereof, and a conductive member covering a first end of the insulating member and electrically interconnecting the first shield member and the second shield member. The power supply member passes through an inner space in the insulating member and supplies electromagnetic waves to the upper electrode.

A method of producing an induced pluripotent stem cell, comprising the step of introducing at least one kind of non-viral expression vector incorporating at least one gene that encodes a reprogramming factor into a somatic cell. In some embodiments, the gene that encodes a reprogramming factor is one or more kind of genes selected from the group consisting of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and the Nanog gene.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.