A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ionization chamber of the device operates at high pressures and provides for a large number of interactions between the electron beam and the gas molecules.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses.

A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses.

The purpose of the present invention is to provide a charged particle gun using merely an electrostatic lens, said charged particle gun being relatively small and having less aberration, and to provide a field emission-type charged particle gun having high luminance even with a high current. This charged particle gun has: a charged particle source; an acceleration electrode that accelerates charged particles emitted from the charged particle source; a control electrode, which is disposed further toward the charged particle source side than the acceleration electrode, and which has a larger aperture diameter than the aperture diameter of the acceleration electrode; and a control unit that controls, on the basis of a potential applied to the acceleration electrode, a potential to be applied to the control electrode.