A vacuum container is configured so that an opening on one side and an opening on another side in the longitudinal direction of a cylindrical insulating body are sealed with an emitter unit and a target unit respectively; and a vacuum chamber is provided on the inner peripheral side of the insulating body. The emitter unit is provided with: a moving body located on the one side in the longitudinal direction in the vacuum chamber and supported so as to be movable in the longitudinal direction via a bellows; and a guard electrode located on the outer peripheral side of the moving body. An emitter section having an electron generating section is formed at a tip section of the moving body on the other side in the longitudinal direction by subjecting the surface of the tip section to film formation processing.

The invention relates to a gas reservoir (3000) for receiving a precursor (3035). The gas reservoir (3000) has a gas-receiving unit (3004) which is arranged in a first receiving unit (3002) of a basic body (3001), and a sliding unit (3007) which is arranged movably in a second receiving unit (3003) of the basic body (3001). The gas-receiving unit (3004) has a movable closure unit (3006) for opening or closing a gas outlet opening (3005) of the gas-receiving unit (3004). In a first position of the sliding unit (3007), both a first opening (3009) of a sliding-unit line device (3008) is fluidically connected to a first basic body opening (3011) and a second opening (3010) of the sliding-unit line device (3008) is fluidically connected to a second basic body opening (3012). In the second position of the sliding unit (3007), both the first opening (3009) is arranged at an inner wall (3015) of the second receiving unit (3003) and the second opening (3010) is arranged at the movable closure unit (3006).

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

An object of the present disclosure is to provide a charged particle beam device that can suppress an influence to a device generated according to the preliminary exhaust. In order to achieve the object, suggested is a charged particle beam device including a vacuum sample chamber that maintains an atmosphere around a sample to be irradiated with a charged particle beam in a vacuum state; and a preliminary exhaust chamber to which a vacuum pump for vacuuming an atmosphere of the sample introduced into the vacuum sample chamber is connected, in which the vacuum sample chamber is a box-shaped body including a top plate, and a portion between the top plate and a side wall of the box-shaped body positioned below the top plate includes a portion in which the top plate and the side wall are not in contact with each other.

An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

A system for laser enhanced voltage contrast using an optical fiber is provided. The system includes a vacuum chamber with a stage that secures a wafer. A laser light source outside the vacuum chamber directs light to an optical fiber. The optical fiber transmits all wavelengths of light from the laser light source into the vacuum chamber through a wall of the vacuum chamber.

A method and an integrated system. The integrated system can include an optical inspection unit, a charged particle device, an interface unit, and at least one controller.

A system includes a vacuum chamber and a component, disposed in the vacuum chamber, that heats up during operation. The system also includes a cooling line, mechanically coupled to the component, to circulate coolant to cool the component during operation. The system further includes a vacuum gauge to measure a total pressure in the vacuum chamber and an analyzer to measure a partial pressure in the vacuum chamber of a substance that can leak from the cooling line.