In one embodiment, a multi charged particle beam evaluation method includes writing a plurality of evaluation patterns on a substrate by using multi charged particle beams, with a design value of a line width changed by a predetermined change amount at a predetermined pitch, measuring the line widths of the plurality of evaluation patterns thus written, and extracting a variation in a specific period of a distribution of differences between results of a measurement value and the design value of each of the line widths of the plurality of evaluation patterns. The predetermined change amount is equal to or larger than data resolution and smaller than a size of each of pixels, each of which is a unit region to be irradiated with one of the multi charged particle beams.

An electron beam additive manufacturing system includes an electron beam source, an x-ray detection sensor configured to generate a waveform corresponding to an amount of x-rays detected by the x-ray detection sensor, and an electronic control unit comprising a processor and a non-transitory computer-readable memory, the electronic control unit communicatively coupled to the electron beam source and the x-ray detection sensor. The electronic control unit is configured to cause the electron beam source to emit an electron beam such that the electron beam impinges a verification plate, receive the waveform generated by the x-ray detection sensor in response to the x-ray detection sensor capturing x-rays emitted from the impingement of the electron beam with the verification plate, and determine a melt performance of a surface material of the verification plate based on the waveform.

Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

A method of tuning an ion implantation apparatus is disclosed. The method includes operations of applying any wafer acceptance test (WAT) recipe to a test sample, calculating a recipe for a direct current (DC) final energy magnet (FEM), calculating a real energy of the DC FEM, verifying the tool energy shift, and obtaining a peak spectrum of the DC FEM.

An ion beam cutting calibration system includes a sample cutting table, a coarse calibration device, a microscopic observation device, and a flip table. The flip table includes a flip plate, which is configured to drive the sample cutting table to swing in a vertical plane. The swing axis of the flip plate is collinear with the side edge of the top surface of the ion beam shielding plate close to the sample. Through the coordinated operation of the flip table, the microscopic observation device, the sample cutting table, and the coarse calibration device, the ion beam cutting calibration system avoids the problem that when the position relationship between the sample and the shielding plate is observed from multiple angles during calibration loading, the sample and the shielding plate are likely to be moved out of the field of vision of the microscope and out of focus.

A standard reference plate is configured for insertion into an additive manufacturing apparatus for calibrating an electron beam of the additive manufacturing apparatus. The standard reference plate includes a lower plate and an upper plate being essentially in parallel and attached spaced apart from each other, the upper plate including a plurality of holes. A predetermined hollow pattern is provided inside the holes, and a spacing between the holes and the size of the holes and a distance between the upper plate and the lower plate and a position of an x-ray sensor of the additive manufacturing apparatus with respect to the standard reference plate are arranged so that x-rays emanating from the lower plate, when the electron beam is passing through a hollow part of the hollow pattern, will not pass directly from the lower plate through any one of the holes to the x-ray sensor.

A fine-adjustable charged particle lens comprises a magnetic circuit assembly including permanent magnets, a yoke body, and a shunting device comprising a shunting component, and this assembly surrounds a beam passage extending along the longitudinal axis (cx). The shunting device is placed in the yoke body besides the permanent magnets and may be composed of several sector components, comprising different high magnetically permeable materials. The permanent magnet and the yoke body form a magnetic circuit having at least two gaps, in order to generate a magnetic field reaching inwards into the beam passage, into which a sleeve insert having electrostatic electrodes can be inserted, which may also generate an electric field spatially overlapping said magnetic field. The shunting device partially bypasses the magnetic flux of said circuit assembly and thus reduces the magnetic field to a desired value.

An electron beam additive manufacturing system includes an electron beam source, an x-ray detection sensor configured to generate a waveform corresponding to an amount of x-rays detected by the x-ray detection sensor, and an electronic control unit comprising a processor and a non-transitory computer-readable memory, the electronic control unit communicatively coupled to the electron beam source and the x-ray detection sensor. The electronic control unit is configured to cause the electron beam source to emit an electron beam such that the electron beam impinges a verification plate, receive the waveform generated by the x-ray detection sensor in response to the x-ray detection sensor capturing x-rays emitted from the impingement of the electron beam with the verification plate, and determine a melt performance of a surface material of the verification plate based on the waveform.

A High Energy Beam Processing (HEBP) system provides feedback signal monitoring and feedback control for the improvement of process repeatability and three-dimensional (3D) printed part quality. Electrons deflected from a substrate in the processing area impinge on a surface of a sensor. The electrons result from the deflection of an electron beam from the substrate. Either one or both of an initial profile of an electron beam and an initial location of the electron beam relative to the substrate are determined based on a feedback electron signal corresponding to the impingement of the electrons on the surface of the sensor. With an appropriate profile and location of the electron beam, the build structure is fabricated on the substrate.

A three-dimensional calibration structure for measuring buried defects on a semiconductor device is disclosed. The three-dimensional calibration structure includes a defect standard wafer (DSW) including one or more programmed surface defects. The three-dimensional calibration structure includes a planarized layer deposited on the DSW. The three-dimensional calibration structure includes a layer stack deposited on the planarized layer. The layer stack includes two or more alternating layers. The three-dimensional calibration structure includes a cap layer deposited on the layer stack. One or more air gaps are formed in the layer stack following deposition of the cap layer. The three-dimensional calibration structure includes one or more holes formed into at least one of the cap layer, the layer stack, or the planarized layer.