An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device. In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.

Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.