An e-beam apparatus is disclosed, the tool comprising an electron optics system configured to project an e-beam onto an object, an object table to hold the object, and a positioning device configured to move the object table relative to the electron optics system. The positioning device comprises a short stroke stage configured to move the object table relative to the electron optics system and a long stroke stage configured to move the short stroke stage relative to the electron optics system. The e-beam apparatus further comprises a magnetic shield to shield the electron optics system from a magnetic disturbance generated by the positioning device. The magnetic shield may be arranged between the positioning device and the electron optics system.

A method for fabricating structures includes on a substrate includes providing the substrate having a substrate surface, and generating nanostructures or microstructures on the substrate surface at least in part by exposing the substrate surface to thermal particles from a thermal particle source while irradiating the substrate surface with an ion beam. The generated nanostructures or microstructures have a smaller surface area than the area of incidence of the ion beam or a beam generated by the thermal particle source. The method also includes obtaining a measurement of a characteristic of the substrate surface and adjusting at least one of the thermal particle source and the ion beam based on the measurement.

A cluster tool includes a polyhedral transfer chamber, at least one processing chamber, at least one load lock chamber, and an electron beam (e-beam) source. The processing chamber is connected to the polyhedral transfer chamber. The processing chamber is configured to perform a manufacturing procedure to a wafer present therein. The load lock chamber is connected to the polyhedral transfer chamber. The e-beam source is configured to performing an e-beam treatment to the wafer after the wafer is performed the manufacturing procedure.

An e-beam apparatus is disclosed, the tool comprising an electron optics system configured to project an e-beam onto an object, an object table to hold the object, and a positioning device configured to move the object table relative to the electron optics system. The positioning device comprises a short stroke stage configured to move the object table relative to the electron optics system and a long stroke stage configured to move the short stroke stage relative to the electron optics system. The e-beam apparatus further comprises a magnetic shield to shield the electron optics system from a magnetic disturbance generated by the positioning device. The magnetic shield may be arranged between the positioning device and the electron optics system.

A method for fabricating structures includes on a substrate includes providing the substrate having a substrate surface, and providing a set of control parameters to an ion beam source and to a thermal source corresponding to a desired structure topology. The method further includes using directed irradiation synthesis to cause self-organization of a plurality of structures comprising at least one of the group of nanostructures and microstructures in a first surface area of the substrate by exposing the substrate surface to an ion beam from the ion beam source and to thermal particles from the thermal source. The ion beam has a first area of effect on the substrate surface, and the thermal particles has a second area of effect on the substrate surface. Each of the first area of effect and the second area of effect including the first surface area.

A method for operating a particle beam generator for a particle beam device, and a particle beam device for carrying out this method, are provided. An extractor voltage may be set to an extractor value using a first variable voltage supply unit. An emission current of the particle beam generator may be measured. When the emission current of the particle beam generator decreases, a suppressor voltage applied to a suppressor electrode may be adjusted using a second variable voltage supply unit such that a specific emission current of the particle beam generator is reached or maintained. When the emission current of the particle beam generator increases, the extractor voltage applied to the extractor electrode may be adjusted using the first variable voltage supply unit such that the specific emission current of the particle beam generator is reached or maintained.

An ion beam generator includes an emission electrode, an extraction electrode, and an electricity generator. The emission electrode includes a substrate and a plurality of nanowires extending away from the substrate, substantially towards the extraction electrode, the nanowires having a length of 50 nm to 50 m. The emission electrode has a source of ions including a sheet of ionic liquid formed on the substrate and at least partially immersing the nanowires. The nanowires and the substrate are electrically insulating or semiconducting, and the electricity generator is connected to the sheet of ionic liquid. The emission electrode is thus capable of sending ion beams from the ionic liquid to the extraction electrode.

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.

A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.

A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.