A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

A high voltage feedthrough assembly (100) for providing an electric potential in a vacuum environment comprises a flange connector (10) being adapted for a connection with a vacuum vessel (201), wherein the flange connector (10) has an inner side (11) facing to the vacuum vessel (201) and an outer side (12) facing to an environment of the vacuum vessel 201, a vacuumtight insulator tube (20) having a longitudinal extension with a first end (21) facing to the flange connector (10) and a second end (22) being adapted for projecting into the vacuum vessel (201), and an electrode device (30) coupled to the second end (22) of the insulator tube (20), wherein the electrode device (30) has a front electrode (31), including a photocathode or a field emitter tip and facing to the vacuum vessel (201) and a cable adapter (32) for receiving a high-voltage cable (214), wherein a flexible tube connector (40) is provided for a vacuum-tight coupling of the insulator tube (20) with the flange connector (10), and a manipulator device (50) is connected with the insulator tube (20) for adjusting a geometrical arrangement of the insulator tube (20) relative to the flange connector (10). Furthermore, an electron diffraction or imaging apparatus (transmission electron microscope, TEM) 200 for static and/or time-resolved diffraction, including (nano-) crystallography, and real space imaging for structural investigations including the high voltage feedthrough assembly (100) and a method of manipulating an electrode device (30) in a vacuum environment are described.

A high voltage feedthrough assembly (100) for providing an electric potential in a vacuum environment comprises a flange connector (10) being adapted for a connection with a vacuum vessel (201), wherein the flange connector (10) has an inner side (11) facing to the vacuum vessel (201) and an outer side (12) facing to an environment of the vacuum vessel 201, a vacuumtight insulator tube (20) having a longitudinal extension with a first end (21) facing to the flange connector (10) and a second end (22) being adapted for projecting into the vacuum vessel (201), and an electrode device (30) coupled to the second end (22) of the insulator tube (20), wherein the electrode device (30) has a front electrode (31), including a photocathode or a field emitter tip and facing to the vacuum vessel (201) and a cable adapter (32) for receiving a high-voltage cable (214), wherein a flexible tube connector (40) is provided for a vacuum-tight coupling of the insulator tube (20) with the flange connector (10), and a manipulator device (50) is connected with the insulator tube (20) for adjusting a geometrical arrangement of the insulator tube (20) relative to the flange connector (10). Furthermore, an electron diffraction or imaging apparatus (transmission electron microscope, TEM) 200 for static and/or time-resolved diffraction, including (nano-) crystallography, and real space imaging for structural investigations including the high voltage feedthrough assembly (100) and a method of manipulating an electrode device (30) in a vacuum environment are described.

A high voltage generation circuit is equipped with an AC power source, a positive polarity high voltage generating circuit, and a negative polarity high voltage generating circuit. A phase converter that converts the phase of an AC voltage supplied from the AC power source is disposed between the AC power source and the positive polarity high voltage generating circuit, or between the AC power source and the negative polarity high voltage generating circuit.

A high voltage generation circuit is equipped with an AC power source, a positive polarity high voltage generating circuit, and a negative polarity high voltage generating circuit. A phase converter that converts the phase of an AC voltage supplied from the AC power source is disposed between the AC power source and the positive polarity high voltage generating circuit, or between the AC power source and the negative polarity high voltage generating circuit.

A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

An objective of the present invention is to provide a charged particle beam device capable of estimating a lifetime of a filament of a charged particle beam source with a cheap and simple circuit configuration. The charged particle beam device according to the present invention includes a boosting circuit that boosts a voltage to be supplied to a filament and estimates a remaining duration of the filament using a measured value of a current flowing on a low-voltage side of the boosting circuit (see FIG. 3).

An objective of the present invention is to provide a charged particle beam device capable of estimating a lifetime of a filament of a charged particle beam source with a cheap and simple circuit configuration. The charged particle beam device according to the present invention includes a boosting circuit that boosts a voltage to be supplied to a filament and estimates a remaining duration of the filament using a measured value of a current flowing on a low-voltage side of the boosting circuit (see FIG. 3).