The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.

A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to the gas cluster beam, a beam current synchronously with the drive pulse train; obtaining time-of-flight information of the clusters and the monomers in the gas cluster beam based on the beam current and the drive pulse train; determining size information relating to a size distribution of clusters and monomers in the gas cluster ion beam based on the time-of-flight information; adjusting a process parameter of the gas cluster beam based on the size information; and exposing the substrate to the gas cluster beam with the adjusted process parameter.

A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to the gas cluster beam, a beam current synchronously with the drive pulse train; obtaining time-of-flight information of the clusters and the monomers in the gas cluster beam based on the beam current and the drive pulse train; determining size information relating to a size distribution of clusters and monomers in the gas cluster ion beam based on the time-of-flight information; adjusting a process parameter of the gas cluster beam based on the size information; and exposing the substrate to the gas cluster beam with the adjusted process parameter.

A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

An FIB system includes an ion source for producing the ion beam, a lens system which includes an objective lens and which is operative to focus the ion beam onto a sample such that secondary electrons are produced from the sample, a detector for detecting the secondary electrons, and a controller for controlling the lens system. The controller operates i) to provide control so that a focus of the ion beam is varied by directing the ion beam onto the sample, ii) to measure a signal intensity from the secondary electrons produced from the sample during the variation of the strength of the objective lens, iii) to adjust the focus of the ion beam, iv) to acquire a secondary electron image containing an image of a trace of a spot, and v) to correct the deviation of the field of view of the ion beam.

An FIB system includes an ion source for producing the ion beam, a lens system which includes an objective lens and which is operative to focus the ion beam onto a sample such that secondary electrons are produced from the sample, a detector for detecting the secondary electrons, and a controller for controlling the lens system. The controller operates i) to provide control so that a focus of the ion beam is varied by directing the ion beam onto the sample, ii) to measure a signal intensity from the secondary electrons produced from the sample during the variation of the strength of the objective lens, iii) to adjust the focus of the ion beam, iv) to acquire a secondary electron image containing an image of a trace of a spot, and v) to correct the deviation of the field of view of the ion beam.

A specimen machining device includes an illumination system that illuminates a specimen; a camera that photographs the specimen; and a processing unit that controls the illumination system and the camera, and acquires a machining control image which is used for controlling an ion source and a display image which is displayed on a display unit. The processing unit controls the illumination system to illuminate the specimen under a machining illumination condition; acquires the machining control image by controlling the camera to photograph the specimen illuminated under the machining control illumination condition; controls the ion source based on the machining control image; controls the illumination system to illuminate the specimen under a display illumination condition which is different from the machining control illumination condition; acquires the display image by controlling the camera to photograph the specimen illuminated under the display illumination condition; and displays the display image on the display unit.

A method includes moving a plurality of sensors along a translation path with respect to an ion beam, acquiring sensor signals produced by the plurality of sensors, converting the acquired sensor signals into a data set representative of a two-dimensional (2D) profile of the ion beam, generating a plurality of first one-dimensional (1D) profiles of the ion beam from the data set, generating a plurality of second 1D profiles of the ion beam by spatially inverting each of the plurality of first 1D profiles, generating a plurality of third 1D profiles of the ion beam by superposing first current density values of each of the plurality of first 1D profiles with second current density values of a corresponding one of the plurality of second 1D profiles and determining whether to continue an implantation process with the ion beam in accordance with the plurality of third 1D profiles.