A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.

A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.

A wiring board includes: a substrate having transparency; a plurality of first wirings which are arranged on an upper surface of the substrate and extend in a first direction and each of which has a back surface in contact with the substrate and a front surface facing an opposite side of the back surface; and has a back surface in contact with the substrate and a front surface facing an opposite side of the back surface. The first wiring has a pair of side surfaces which extend in the first direction and are adjacent to the back surface of the first wiring, and each of the pair of side surfaces of the second wiring is recessed inward. The second wiring has a pair of side surfaces which extend in the second direction and are adjacent to the back surface of the second wiring.

Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate, a first isolation trench located in the substrate, a first insulating layer covering a bottom surface and a lower part of a sidewall of the first isolation trench, a second insulating layer covering an upper part of the sidewall of the first isolation trench, and a third insulating layer at least partially located between the first insulating layer and the second insulating layer to isolate the first insulating layer from the second insulating layer.

An integrated circuit (IC) substrate manufacturing process provides time-dependent device characteristic variation due to hydrogen absorption by including one or more gettering layers near the devices that would otherwise absorb hydrogen and exhibit the variation as the hydrogen migrates in the devices. The method includes forming or mounting the devices on a top surface of the semiconductor wafer in die areas of the substrate, forming semiconductor structures in the semiconductor die areas, forming a getter layer above or adjacent to the devices in the die areas, and processing the wafer with one or more processes exposing the wafer to vapor having a hydrogen content, whereby an amount of hydrogen absorbed by the devices is reduced by presence of the getter layer. The method produces wafers including semiconductor dies with reduced hydrogen absorption by the devices and packaged ICs including the dies.

Methods and structures for forming highly-doped, ultrathin layers for transistors formed in semiconductor-on-insulator substrates are described. High dopant concentrations may be achieved in ultrathin semiconductor layers to improve device characteristics. Ion implantation at elevated temperatures may mitigate defect formation for stoichiometric dopant concentrations up to about 30%. In-plane stressors may be formed adjacent to channels of transistors formed in ultrathin semiconductor layers.

A device includes a first transistor including a first drain/source terminal and a second transistor including a first gate terminal. A first conductive path is electrically connected between the first drain/source terminal and the first gate terminal. The first conductive path includes a first conductive via electrically connected between the first drain/source terminal and a first track of a first conductive layer, and a second conductive via electrically connected between the first track of the first conductive layer and a first track of a second conductive layer.

Embodiments of the invention are directed to a semiconductor-based structure. A non-limiting example of the semiconductor-based structure includes a fin formed over a substrate. A tunnel is formed through the fin to define an upper fin region and a lower fin region. A gate structure is configured to wrap around a circumference of the upper fin region.

A method includes forming a fin structure on the substrate, wherein the fin structure includes a first fin active region; a second fin active region; and an isolation feature separating the first and second fin active regions; forming a first gate stack on the first fin active region and a second gate stack on the second fin active region; performing a first recessing process to a first source/drain region of the first fin active region by a first dry etch; performing a first epitaxial growth to form a first source/drain feature on the first source/drain region; performing a fin sidewall pull back (FSWPB) process to remove a dielectric layer on the second fin active region; and performing a second epitaxial growth to form a second source/drain feature on a second source/drain region of the second fin active region.

The present disclosure is directed to at least one embodiment of a die including a sidewall having a uniform surface and an irregular surface. The uniform surface may be a scalloped surface and scallops of the scalloped surface are substantially the same size and shape relative to each other. The irregular surface has a more irregular texture as compared to the uniform surface. The irregular surface may include a plurality of randomly spaced high points and a plurality of randomly spaced low points that are between adjacent ones of the high points. In a method of manufacturing the die, a cavity is pre-formed in a substrate and a multilayer structure is formed on the substrate. The multilayer structure includes an active area that is aligned with and overlies the cavity. After the multilayer structure is formed, at least one recess is formed extending into the multilayer structure to the cavity. Forming the recess forms a die structure suspended above the cavity and an extension extending from the die structure to a suspension structure surrounding the die structure. The die structure is released from the die suspension structure by breaking the extension.