A radio frequency module includes: a module board including first and second principal surfaces; first and second power amplifiers on the first principal surface; external-connection terminals on the second principal surface; and first and second via conductors connecting the first and second principal surfaces. The first and second via conductors are spaced apart in the module board, one end of the first via conductor is connected to a first ground electrode of the first power amplifier, the other end of the first via conductor is connected to a first external-connection terminal, one end of the second via conductor is connected to a second ground electrode of the second power amplifier, the other end of the second via conductor is connected to a second external-connection terminal, and the first and second via conductors each penetrate through the module board in a direction normal to the first and second principal surfaces.

An output matching circuit includes a transformer having one end electrically connected to an output terminal of a power amplifier element that amplifies an input signal and another end electrically connected to a terminal connected to a load, and converting an impedance of the terminal connected to the load to an impedance higher than an impedance of the output terminal, a first filter circuit that attenuates a signal within a first frequency band higher than a transmission frequency band of the input signal, and a second filter circuit that attenuates a signal within a second frequency band higher than the first frequency band.

The invention provides a chip including a package substrate, at least one subunit, and a radio frequency chip. Each subunit includes an end-fire antenna disposed on an upper surface of the package substrate. The end-fire antenna is electrically connected to the radio frequency chip through a feed line. The radio frequency chip is located on a lower surface of the package substrate. According to the millimeter-wave antenna chip provided in this application, the end-fire antenna may be lifted to the upper surface of the package substrate of the chip by using stacked metal via holes of the package substrate, and a height of the end-fire antenna relative to a peripheral component may be increased by using a thickness of the package substrate.

A high-frequency package includes a radio wave shielding portion that shields radio waves radiated from a high-frequency component, a radio wave absorber that is arranged facing the high-frequency component and that absorbs the radio waves, and an adjusting means that enables adjustment of distance from the radio wave absorber to the high-frequency component by adjusting a position of the radio wave absorber with respect to the radio wave shielding portion.

Example chip structures are described. One example chip structure includes a die, a first chip bond pad, and a second chip bond pad. A first radio frequency circuit, a second radio frequency circuit, a first interconnect metal wire, and a second interconnect metal wire are disposed in the die. The first interconnect metal wire is connected to the first radio frequency module, and is configured to provide an alternating current ground for the first radio frequency module. The second interconnect metal wire is connected to the second radio frequency module, and is configured to provide an alternating current ground for the second radio frequency module. The first chip bond pad and the second chip bond pad are disposed on a surface of the die.

The present disclosure provides a semiconductor structure including a first substrate having a first surface, a first semiconductor device package disposed on the first surface of the first substrate, and a second semiconductor device package disposed on the first surface of the first substrate. The first semiconductor device package and the second semiconductor device package have a first signal transmission path through the first substrate and a second signal transmission path insulated from the first substrate. The present disclosure also provides an electronic device.

Example power amplifier chips and communication devices are described. One example power amplifier chip includes a package housing and a plurality of power amplifier dies. The plurality of power amplifier dies are packaged in the package housing, and each of the plurality of power amplifier dies includes at least one stage of power amplifier.

A package structure has a first die, a second die, the third die, a molding compound, a first redistribution layer, an antenna and conductive elements. The first die, the second die and the third die are molded in a molding compound. The first redistribution layer is disposed on the molding compound and is electrically connected to the first die, the second die and the third die. The antenna is located on the molding compound and electrically connected to the first die, the second die and the third die, wherein a distance of an electrical connection path between the first die and the antenna is smaller than or equal to a distance of an electrical connection path between the second die and the antenna and a distance of an electrical connection path between the third die and the antenna. The conductive elements are connected to the first redistribution layer, wherein the first redistribution layer is located between the conductive elements and the molding compound.

In a switching circuit, an inductance of an inductor of a shunt circuit is such that off capacitance of a second switching device that is in the off state when a first switching device is in the on state is used to define, in the shunt circuit, a series resonance circuit with a desired resonant frequency. Therefore, the frequency of an unnecessary signal to be attenuated is set to the resonant frequency of the series resonance circuit. Thus, the switching circuit achieves improved isolation characteristics with other circuits by attenuating the unnecessary signal.

On a substrate (200), a resistor (24R) is disposed between a position of an amplifier circuit (11) and a position of a duplexer (24), thereby reducing coupling occurring in a space between the amplifier circuit (11) and a path extending from a main switch (26) to a reception terminal (P24) through the duplexer (24). Even when an RX terminal (242) of the duplexer (24) is oriented toward an amplifier circuit (11) side, a high-frequency module (100) reduces the coupling and can thus prevent a harmonic of a transmission signal in a low band from leaking to the reception terminal (P24) through a path formed by the coupling. That is, the high-frequency module (100) can prevent a reduction in isolation characteristics in the low band and a high band and also provide flexibility in substrate layout.