A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.

A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.

A groove is formed between an inner peripheral edge of an opening of a pad electrode and an outer peripheral edge of a bonding region located inside the pad electrode in plan view.

This disclosure teaches methods for making high-temperature superconducting striated tape combinations and the product high-temperature superconducting striated tape combinations. This disclosure describes an efficient and scalable method for aligning and bonding two superimposed high-temperature superconducting (HTS) filamentary tapes to form a single integrated tape structure. This invention aligns a bottom and top HTS tape with a thin intervening insulator layer with microscopic precision, and electrically connects the two sets of tape filaments with each other. The insulating layer also reinforces adhesion of the top and bottom tapes, mitigating mechanical stress at the electrical connections. The ability of this method to precisely align separate tapes to form a single tape structure makes it compatible with a reel-to-reel production process.

A bonding element and a method for manufacturing the same thereof are provide, wherein the method comprises the following steps: providing a carrier substrate; forming a first metal layer on the carrier substrate; forming a first insulating layer on the first metal layer, wherein the first insulating layer includes a first through hole; forming a first passivation layer and a first conductive layer in the first through hole, wherein the first passivation layer and the first conductive layer in the first through hole form a first connecting bump; forming a first substrate on the first connection bump and the first insulating layer; removing the carrier substrate and the first metal layer to form a first sub-bonding element; and connecting the first sub-bonding element and a second sub-bonding element with a surface of the first passivation of the first connection bump to form the bonding element.

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

A method of fabricating a stretchable and flexible electronic device includes forming each of the functional layers is by: (i) forming on an elastomer substrate a conductive interconnect pattern having islands interconnected by bridges; (ii) applying a conductive paste to the islands; (iii) positioning at least one functional electronic component on each island; and (iv) applying heat to cause the conductive paste to reflow. An elastomer encapsulant is formed over the functional electronic components and the conductive interconnect pattern on each of the functional layers. The elastomer encapsulant has a Young's modulus equal to or less than that of the substrate. The encapsulant includes a pigment to increase absorption of laser light. At least one via is laser ablated, which provides electrical connection to any two functional layers. The via is filled with solder paste to create a bond and electrical connection between the functional layers.

A nanowire bonding interconnect for fine-pitch microelectronics is provided. Vertical nanowires created on conductive pads provide a debris-tolerant bonding layer for making direct metal bonds between opposing pads or vias. Nanowires may be grown from a nanoporous medium with a height between 200-1000 nanometers and a height-to-diameter aspect ratio that enables the nanowires to partially collapse against the opposing conductive pads, creating contact pressure for nanowires to direct-bond to opposing pads. Nanowires may have diameters less than 200 nanometers and spacing less than 1 μm from each other to enable contact or direct-bonding between pads and vias with diameters under 5 μm at very fine pitch. The nanowire bonding interconnects may be used with or without tinning, solders, or adhesives. A nanowire forming technique creates a nanoporous layer on conductive pads, creates nanowires within pores of the nanoporous layer, and removes at least part of the nanoporous layer to reveal a layer of nanowires less than 1 μm in height for direct bonding.

A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.