A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

A semiconductor device, a pad structure, and fabricating methods thereof are provided, relating to the field of semiconductor technology. The pad structure includes a substrate, a first dielectric layer, a groove, a bonding pad and a test pad. The first dielectric layer is disposed on the substrate, and the groove is disposed in the first dielectric layer. One of the bonding pad and the test pad is disposed outside the groove and on the surface of the first dielectric layer not adjacent to the substrate, and the other one is disposed on a bottom of the groove. The semiconductor device, the pad structure, and related fabricating methods improve the production yield and stability of the semiconductor device.

A method of manufacture of an integrated circuit system includes: providing a semiconductor wafer with a bond pad; attaching a detachable carrier to the semiconductor wafer, the detachable carrier including a carrier frame portion and a terminal structure; removing the carrier frame portion with the terminal structure attached to the semiconductor wafer; and forming an encapsulation encapsulating the semiconductor wafer, the bond pad, and the terminal structure.

An embodiment semiconductor structure includes a metal layer. The semiconductor structure also includes a redistribution layer (RDL) structure including an RDL platform and a plurality of RDL pillars disposed between the RDL platform and the metal layer. Additionally, the semiconductor structure includes an under-bump metal (UBM) layer disposed on the RDL platform and a solder bump disposed on the UBM layer, where the UBM layer, the RDL platform, and the RDL pillars form an electrical connection between the solder bump and the metal layer.

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

A method for manufacturing a metal bump device includes providing a substrate structure including a substrate and a metal layer having a recess on the substrate, forming a metal bump on the recess of the metal layer using a ball placement process, and forming a solder paste on the metal bump using a printing process. The manufacturing time is shorter, the manufacturing efficiency is higher, and the manufacturing cost is lower than conventional manufacturing methods.

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

A method of manufacture of an integrated circuit system includes: providing a semiconductor wafer with a bond pad; attaching a detachable carrier to the semiconductor wafer, the detachable carrier including a carrier frame portion and a terminal structure; removing the carrier frame portion with the terminal structure attached to the semiconductor wafer; and forming an encapsulation encapsulating the semiconductor wafer, the bond pad, and the terminal structure.

A method for manufacturing a metal bump device includes providing a substrate structure including a substrate and a metal layer having a recess on the substrate, forming a metal bump on the recess of the metal layer using a ball placement process, and forming a solder paste on the metal bump using a printing process. The manufacturing time is shorter, the manufacturing efficiency is higher, and the manufacturing cost is lower than conventional manufacturing methods.