A first semiconductor structure including a first bonding oxide layer having a first metallic structure embedded therein and a second semiconductor structure including a second bonding oxide layer having second metallic structure embedded therein are provided. A high-k dielectric material is formed on a surface of the first metallic structure. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. The nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layers and either a nitridized high-k dielectric material located in at least an upper portion of the high k dielectric material or a nitridized metallic region located in an upper portion of the second metallic structure. The nitrogen within the nitridized metallic region is then selectively removed to restore the upper portion of the second metallic structure to its original composition. Bonding is then performed.

Provided are a display device and a tiled display device. The display device according to one or more embodiments includes a substrate, transistors above the substrate, a first organic insulating layer above the transistors, a first connection electrode above the first organic insulating layer, and electrically connected to at least one of the transistors, a second connection electrode above the first organic insulating layer, a first power supply line configured to receive a first power voltage, above the first organic insulating layer, and connected to the second connection electrode, and a second organic insulating layer above the first power supply line, and defining an opening area exposing the first power supply line.

A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

A display device including a substrate having a first side surface, a first surface, a second surface opposite to the first surface, a first chamfered surface extending from an edge of the first surface to the first side surface, a second chamfered surface extending from an edge of the second surface t the first side surface, a pixel on the first surface of the substrate and including a light emitting element configured to emit light, a first driving pad at the edge of the first surface of the substrate and electrically connected to the pixel, and a side wiring on the first surface, the first chamfered surface, the first side surface, the second chamfered surface, and the second surface of the substrate. The first driving pad has a flat portion connected to the side wiring.

A display device includes a substrate, a plurality of electrode pads including a first electrode pad and a common electrode pad on the substrate, a light emitting element including a first contact electrode on the first electrode pad and a second contact electrode on the common electrode pad, a conductive adhesive member including a plurality of conductive balls connecting the first electrode pad and the first contact electrode and connecting the common electrode pad and the second contact electrode, and a plurality of protrusions on the substrate and protruding in a thickness direction of the substrate. First protrusions from among the plurality of protrusions overlap the electrode pads in the thickness direction of the substrate.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

A device includes: a first chip including a qubit; and a second chip bonded to the first chip, the second chip including a substrate including first and second opposing surfaces, the first surface facing the first chip, wherein the second chip includes a single layer of superconductor material on the first surface of the substrate, the single layer of superconductor material including a first circuit element. The second chip further includes a second layer on the second surface of the substrate, the second layer including a second circuit element. The second chip further includes a through connector that extends from the first surface of the substrate to the second surface of the substrate and electrically connects a portion of the single layer of superconducting material to the second circuit element.

A device includes: a first chip including a qubit; and a second chip bonded to the first chip, the second chip including a substrate including first and second opposing surfaces, the first surface facing the first chip, wherein the second chip includes a single layer of superconductor material on the first surface of the substrate, the single layer of superconductor material including a first circuit element. The second chip further includes a second layer on the second surface of the substrate, the second layer including a second circuit element. The second chip further includes a through connector that extends from the first surface of the substrate to the second surface of the substrate and electrically connects a portion of the single layer of superconducting material to the second circuit element.

A display device includes a substrate including a first surface, a second surface opposite to the first surface, a first chamfered surface extending from one side of the first surface, a second chamfered surface extending from one side of the second surface, and a side surface connecting the first chamfered surface to the second chamfered surface, a pixel on the first surface of the substrate and including a light emitting element to emit light, a plurality of front pad parts on an edge of the first surface of the substrate and electrically connected to the pixel, a plurality of rear pad parts on an edge of the second surface of the substrate, and a plurality of side surface connection lines on the side surface of the substrate electrically connecting the plurality of front pad parts to the plurality of rear pad parts.