Patent classifications
H
ELECTRICITY
Load children
H01
ELECTRIC ELEMENTS
Load children
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
Load children
2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/26
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/28
Structure, shape, material or disposition of the layer connectors prior to the connecting process
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29
of an individual layer connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29001
Core members of the layer connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/291
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29163
the principal constituent melting at a temperature of greater than 1550°C
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29179
Niobium [Nb] as principal constituent
Filter patents View analytics View as hierarchy Open in page

H01L2224/29179

BONDED STRUCTURE AND METHOD OF MANUFACTURING THE SAME
20180240769 · 2018-08-23 · ·

A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.

BONDED STRUCTURE AND METHOD OF MANUFACTURING THE SAME
20180240769 · 2018-08-23 · ·

A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.