A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm.sup.−1.

A metal sintered bonding body bonds a substrate and a die. In the metal sintered bonding body, at least a center part and corner part of a rectangular region where the metal sintered bonding body faces the die have a low-porosity region whose porosity is lower than an average porosity of the rectangular region. The low-porosity region is located within a strip-shaped region whose central lines are diagonal lines of the rectangular region.

A method of forming a bonding assembly that includes positioning a plurality of polymer spheres against an opal structure and placing a substrate against a second major surface of the opal structure. The opal structure includes the first major surface and the second major surface with a plurality of voids defined therebetween. The plurality of polymer spheres encapsulates a solder material disposed therein and contacts the first major surface of the opal structure. The method includes depositing a material within the voids of the opal structure and removing the opal structure to form an inverse opal structure between the first and second major surfaces. The method further includes removing the plurality of polymer spheres to expose the solder material encapsulated therein and placing a semiconductor device onto the inverse opal structure in contact with the solder material.

A method of forming a bonding assembly that includes positioning a plurality of polymer spheres against an opal structure and placing a substrate against a second major surface of the opal structure. The opal structure includes the first major surface and the second major surface with a plurality of voids defined therebetween. The plurality of polymer spheres encapsulates a solder material disposed therein and contacts the first major surface of the opal structure. The method includes depositing a material within the voids of the opal structure and removing the opal structure to form an inverse opal structure between the first and second major surfaces. The method further includes removing the plurality of polymer spheres to expose the solder material encapsulated therein and placing a semiconductor device onto the inverse opal structure in contact with the solder material.

Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.

Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.

Provided is an image display device including a micro light emission element that is connected onto a drive circuit substrate incorporating a drive circuit of the micro light emission element. The micro light emission elements has a light emission surface on an opposite side to a bonding surface with the drive circuit, at least one of a surface on a connecting surface side of the micro light emission element and a surface on a connecting surface side of the drive circuit substrate has a protrusion portion and a recess portion, an electrode of the micro light emission element and an electrode of the drive circuit substrate side are connected to each other via a metal nanoparticle, and a space formed between the surface on the connecting surface side of the micro light emission element and a side of the surface on the connecting surface of the drive circuit substrate is filled with a photo-curing resin.

The disclosed component module includes a component comprising at least one electric contact to which at least one porous contact piece is connected; the component module further includes a cooling system for fluid-based cooling, said cooling system comprising one or more cooling ducts which are formed by pores of the porous contact piece. The disclosed power module comprises a component module of said type.

A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.

A method of forming a bonding assembly that includes positioning a plurality of polymer spheres against an opal structure and placing a substrate against a second major surface of the opal structure. The opal structure includes the first major surface and the second major surface with a plurality of voids defined therebetween. The plurality of polymer spheres encapsulates a solder material disposed therein and contacts the first major surface of the opal structure. The method includes depositing a material within the voids of the opal structure and removing the opal structure to form an inverse opal structure between the first and second major surfaces. The method further includes removing the plurality of polymer spheres to expose the solder material encapsulated therein and placing a semiconductor device onto the inverse opal structure in contact with the solder material.