A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 10.sup.1 Ω.Math.cm and 10.sup.10 Ω.Math.cm.

[Problem] To provide a multi-layer sheet for mold underfill encapsulation, which exhibits good infiltrability between electrodes. [Solution] In order to solve the aforementioned problem, the present invention provides a multi-layer sheet for mold underfill encapsulation, which is characterized by having provided as an outermost layer thereof an (A) layer that comprises a resin composition having a local maximum loss tangent (tan δ) value of 3 or more at a measurement temperature of 125° C. for a measurement time of 0-100 seconds.

The present invention achieves chemical bonding by means of a joined film made of oxides formed on a joined surface. In a vacuum container, amorphous oxide thin films are respectively formed on smooth surfaces of two substrates, and the two substrates overlap such that the amorphous oxide thin films formed on the two substrates come into contact with each other, thereby causing chemical bonding involving an atomic diffusion at a joined interface between the amorphous oxide thin films to join the two substrates.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields.

A package structure and method of manufacturing a package structure are provided. The package structure comprises two semiconductor structures and two bonding layers sandwiched between both semiconductor structures. Each bonding layer has a plurality of bonding pads separated by an isolation layer. Each bonding pad has a bonding surface including a bonding region and at least one buffer region. The bonding regions in both bonding layers bond to each other. The buffer region of one semiconductor structure bonds to the isolation layer of the other semiconductor structure. A ratio of a surface area of the buffer region to that of the bonding region in each metal pad is from about 0.01 to about 10.

This disclosure is related to integrating optoelectronics microdevices into a system substrate for efficient and durable electrical bonding between two substrates at low temperature. 2D nanostructures and 3D scaffolds may create interlocking structures for improved bonding properties. Addition of nanoparticles into the structure creates high surface area for better conduction. Application of curing agents before or after alignment of micro devices and receiving substrates further assists with formation of strong bonds.

A display module and a method for manufacturing thereof are provided. The display module includes a substrate including a pad, a conduction film which is bonded to the substrate including the pad, wherein at least one of a surface of the conduction film and an inner portion of the conduction film is black color treated, and a display device mounted on the pad to which the conduction film is bonded.

A display module and a method for manufacturing thereof are provided. The display module includes a substrate including a pad, a conduction film which is bonded to the substrate including the pad, wherein at least one of a surface of the conduction film and an inner portion of the conduction film is black color treated, and a display device mounted on the pad to which the conduction film is bonded.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, including various adhesives applications.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, such as color enhancement, and color enhancement structures containing the same.