A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.

A diffusion soldering method for joining an electronic component to a substrate is provided. The joining surfaces are designed such that cavities are formed in a joining gap between the component and substrate. The formation of such cavities can be provided, e.g., by depressions in a mounting surface of the component and/or in a contact surface of the substrate, the depressions being cup-shaped and/or defining channels that surround columnar structural elements, the end faces of which define the mounting surface and/or contact surface. The cavities are designed such that solder material can leak into the cavities when the component during a heating process to achieve a desired width of the joining gap. This allows for the formation of a narrow-width joining having a diffusion zone that bridges the joining gap upon soldering. In this manner, a diffusion solder connection can be produced even using standard solder.