Patent classifications
H01L2224/30155
PRINTING COMPONENTS OVER SUBSTRATE POST EDGES
A method of making a micro-module structure comprises providing a substrate, the substrate having a substrate surface and comprising a substrate post protruding from the substrate surface. A component is disposed on the substrate post, the component having a component top side and a component bottom side opposite the component top side, the component bottom side disposed on the substrate post. The component extends over at least one edge of the substrate post. One or more component electrodes are disposed on the component.
Die Features for Self-Alignment During Die Bonding
A semiconductor device assembly that includes a substrate having a first side and a second side, the first side having at least one dummy pad and at least one electrical pad. The semiconductor device assembly includes a first semiconductor device having a first side and a second side and at least one electrical pillar extending from the second side. The electrical pillar is connected to the electrical pad via solder to form an electrical interconnect. The semiconductor device assembly includes at least one dummy pillar extending from the second side of the first semiconductor device and a liquid positioned between an end of the dummy pillar and the dummy pad. The surface tension of the liquid pulls the dummy pillar towards the dummy pad. The surface tension may reduce or minimize a warpage of the semiconductor device assembly and/or align the dummy pillar and the dummy pad.
HYBRID NANOSILVER/LIQUID METAL INK COMPOSITION AND USES THEREOF
The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.
PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME
A package structure and a method for fabricating the same are provided. The package structure includes a substrate, a semiconductor package and an adhesive body. The substrate has a first board surface and a second board surface. The semiconductor package has an upper surface and a lower surface, is disposed on the first board surface and electrically connected to the substrate through pins, and has a first vertical projection on the first board surface. An adhesive groove is disposed on the first board surface and is located in at least one portion of the first vertical projection and a periphery of the first vertical projection. The adhesive body is disposed in the adhesive groove, and protrudes to contact the lower surface, so as to fix the semiconductor package. The adhesive groove does not overlap with the pins, and the adhesive body does not contact the pins.
Hybrid nanosilver/liquid metal ink composition and uses thereof
The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.
Light receiving element and light receiving device
A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.
Display panel, preparation method thereof, and display device
Provided are a display panel, a preparation method thereof, and a display device. The display panel includes a plurality of sub-panels. Each sub-panel includes first substrate, second substrate, bezel adhesive located therebetween, a plurality of bank structures, and a plurality of light-emitting elements. At least one light-emitting element forms a pixel unit. Each bank structure is located between adjacent pixel units. Seaming adhesive is located between adjacent sub-panels. The sub-panels share a same first substrate, and the seaming adhesive is disposed on the same first substrate. The first substrate includes a display region and a non-display region surrounding the display region. The light-emitting elements and the bank structures are located in the display region, and the bezel adhesive is located in the non-display region. In this manner, splicing gaps between adjacent sub-panels can be effectively reduced, and thus the display effect of the display panel can be improved.
LIGHT RECEIVING ELEMENT AND LIGHT RECEIVING DEVICE
A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.
Hybrid nanosilver/liquid metal ink composition and uses thereof
The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.
HYBRID NANOSILVER/LIQUID METAL INK COMPOSITION AND USES THEREOF
The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.