A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded. The area of the circuit pattern is larger in plan view than that of a front surface of the resistance element. The metal block has a thickness greater than that of the circuit pattern in a direction orthogonal to the back surface of the metal block. As a result, the metal block properly conducts heat generated by the resistance film of the resistance element to the circuit pattern.

Flexible devices including conductive traces with enhanced stretchability, and methods of making and using the same are provided. The circuit die is disposed on a flexible substrate. Electrically conductive traces are formed in channels on the flexible substrate to electrically contact with contact pads of the circuit die. A first polymer liquid flows in the channels to cover a free surface of the traces. The circuit die can also be surrounded by a curing product of a second polymer liquid.

A substrate having an electronic component embedded therein includes a core substrate including first and second wiring layers disposed on different levels and one or more insulating layers disposed between the first and second wiring layers, having a cavity in which a stopper layer is disposed on a bottom surface of the cavity, and including a groove disposed around the stopper layer on the bottom surface; an electronic component disposed on the stopper layer in the cavity; an insulating material covering at least a portion of each of the core substrate and the electronic component and disposed in at least a portion of each of the cavity and the groove; and a third wiring layer disposed on the insulating material. The stopper layer protrudes on the bottom surface.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

In order to achieve the above-described objects, according to an aspect of the present disclosure, a display device includes a substrate which includes an active area and a non-active area extending from the active area and including a pad area and is formed of any one of a transparent conducting oxide and an oxide semiconductor; a plurality of inorganic insulating layers disposed on the substrate; a dam member having one end disposed on the pad area and the other end disposed at the outside of the substrate; and a plurality of flexible films which is disposed to cover the dam member and has one end disposed in the pad area. Accordingly, the dam member which covers the pad area is formed to minimize the crack of the plurality of inorganic insulating layers at the edge of the substrate.

Semiconductor assemblies including thermal management configurations for reducing heat transfer between overlapping devices and associated systems and methods are disclosed herein. A semiconductor assembly may comprise a first device and a second device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the first and second devices. The thermally conductive layer and/or the thermal-insulator interposer may be configured to reduce heat transfer between the first and second devices.

A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A heat dissipation device includes a substrate with a network of thermally-conductive vias and thermally-conductive layers. The substrate has a first surface and a second surface opposite to the first surface. A heat dissipation interface layer including a stack of a first layer made of a first thermally-conductive material and a second layer made of a second thermally-conductive material. The first material is different from the second material. A surface of the first layer is coplanar with the first surface of the substrate. At least one of the thermally-conductive vias of said network supports and is in contact with the first layer. At least one opening thoroughly crosses the stack of the first and second layers. Material of the substrate fills the opening in the first layer.

A conductive structure is provided. The conductive structure includes a first conductive layer, a second conductive layer, and an insulating layer sandwiched between the first conductive layer and second conductive layer. The insulating layer has a first opening and a second opening through which the first conductive layer is electrically connected to the second conductive layer. The partition between the first opening and the second opening has a width greater than 0 and less than or equal to the average width of the first opening and second opening.