Patent classifications
H01L2224/742
SEMICONDUCTOR-MOUNTED PRODUCT
A semiconductor-mounted product includes a semiconductor package, a wiring substrate, four or more soldered portions, and a resin-reinforced portion. Each of the soldered portions electrically connects the semiconductor package to the wiring of the wiring substrate. The resin-reinforced portion is formed on a side surface of each of the soldered portions. Each of the soldered portions has a first solder region formed closer to the semiconductor package than the wiring substrate and a second solder region formed closer to the wiring substrate than the semiconductor package. A proportion of a void present in a polygon connecting centers of soldered portions located at outermost positions among the soldered portions to a sum of the void and the resin-reinforced portion is from 10% to 99%, inclusive.
Semiconductor devices with flexible connector array
Semiconductor devices having an array of flexible connectors configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor assembly includes a substrate coupled to an array of flexible connectors. Each flexible connector can be transformed between a resting configuration and a loaded configuration. Each flexible connector can include a conductive wire electrically coupled to the substrate and a support material at least partially surrounding the conductive wire. The conductive wire can have a first shape when the flexible connector is in the resting configuration and a second, different shape when the flexible connector is in the loaded configuration.
Hierarchical density uniformization for semiconductor feature surface planarization
The current disclosure describes techniques for managing planarization of features formed on a semiconductor wafer. The disclosed techniques achieve relative planarization of micro bump structures formed on a wafer surface by adjusting the pattern density of the micro bumps formed within various regions on the wafer surface. The surface area size of a micro bump formed within a given wafer surface region may be enlarged or reduced to change the pattern density. A dummy micro bump may be inserted into a given wafer surface region to increase the pattern density.
WAFER-LEVEL PACKAGE INCLUDING UNDER BUMP METAL LAYER
A semiconductor package includes a semiconductor chip comprising a first surface and a second surface, a redistribution layer on the first surface of the semiconductor chip, an under bump metal (UBM) layer on the redistribution layer, and a solder bump on the UBM layer, and the solder bump covers both outer side surfaces of the UBM layer.
Massively-parallel micronozzle array for direct write electrodeposition of high-density microstructure arrays
A micronozzle assembly, comprising a reservoir, an array of structures comprising micronozzles, a porous structure positioned between the reservoir and the array, and an electrode within the reservoir, wherein the electrode comprises any of a mesh, a frame along the perimeter of the cavity of the reservoir, or a rod extending into a cavity of the reservoir.
Wafer-level package including under bump metal layer
A semiconductor package includes a semiconductor chip comprising a first surface and a second surface, a redistribution layer on the first surface of the semiconductor chip, an under bump metal (UBM) layer on the redistribution layer, and a solder bump on the UBM layer, and the solder bump covers both outer side surfaces of the UBM layer.
ELECTROHYDRODYNAMIC EJECTION PRINTING AND ELECTROPLATING FOR PHOTORESIST-FREE FORMATION OF METAL FEATURES
Methods, inks, apparatus, and systems for forming metal features on semiconductor substrates are provided herein. Advantageously, the techniques herein do not require the use of photoresist, and can be accomplished without many of the processes and apparatuses used in the conventional process flow. Instead, electrohydrodynamic ejection printing is used to deposit an ink that includes an electroplating additive such as accelerator or inhibitor. The printed substrate can then be electroplated in a preferential deposition process that achieves a first deposition rate on areas of the substrate where the ink is present and a second deposition rate on areas of the substrate where the ink is absent, the first and second deposition rates being different from one another. After electroplating, chemical etching may be used to spatially isolate the preferentially grown metal features from one another.
SEMICONDUCTOR DEVICES WITH FLEXIBLE CONNECTOR ARRAY
A semiconductor device includes an array of flexible connectors configured to mitigate thermomechanical stresses. In one embodiment, a semiconductor assembly includes a substrate coupled to an array of flexible connectors. Each flexible connector can be transformed between a resting configuration and a loaded configuration. Each flexible connector includes a conductive wire electrically coupled to the substrate and a support material at least partially surrounding the conductive wire. The conductive wire has a first shape when the flexible connector is in the resting configuration and a second, different shape when the flexible connector is in the loaded configuration. The first shape includes at least two apices spaced apart from each other in a vertical dimension by a first distance, and the second shape includes the two apices spaced apart from each other in the vertical dimension by a second distance different than the first distance.
HIERARCHICAL DENSITY UNIFORMIZATION FOR SEMICONDUCTOR FEATURE SURFACE PLANARIZATION
The current disclosure describes techniques for managing planarization of features formed on a semiconductor wafer. The disclosed techniques achieve relative planarization of micro bump structures formed on a wafer surface by adjusting the pattern density of the micro bumps formed within various regions on the wafer surface. The surface area size of a micro bump formed within a given wafer surface region may be enlarged or reduced to change the pattern density. A dummy micro bump may be inserted into a given wafer surface region to increase the pattern density.
SYSTEMS FOR THERMALLY TREATING CONDUCTIVE ELEMENTS ON SEMICONDUCTOR AND WAFER STRUCTURES
Methods of reflowing electrically conductive elements on a wafer may involve directing a laser beam toward a region of a surface of a wafer supported on a film of a film frame to reflow at least one electrically conductive element on the surface of the wafer. In some embodiments, the wafer may be detached from a carrier substrate and be secured to the film frame before laser reflow. Apparatus for performing the methods, and methods of repairing previously reflowed conductive elements on a wafer are also disclosed.