Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

A method for digital direct recording of an artwork representing electric connections of components on a substrate includes receiving data representing the artwork, analyzing the artwork representation to identify sections that are similar and sections that are unique and to identify locations of the components in the artwork, and dividing the artwork into modules corresponding to the identified sections, providing a set of unique modules and a set of redundant modules. The method also includes rasterizing each unique module to provide rasterized modules, dividing the rasterized modules into submodules, and receiving measurements representing positions of the components on the substrate. The method also includes receiving measurements representing the position of the substrate, calculating the differences between the measured positions of the components and the artwork positions of the components, calculating modifications for each of the sub modules to compensate for the differences, and recording the modified submodules onto the substrate to form a modified artwork on the substrate.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

A display device and chip bonding method thereof are provided. The display device includes a flexible display panel and a chip bonded to the non-display area of the flexible display panel with the extension directions of individual bumps satisfying, depending on the area in which the bumps are located, the following requirements: in each row of bumps, at least the individual bumps in lateral zones have their extension lines on the same side converging at a same point on the reference line, and the two bumps belong to a same bump group have their extension lines respectively forming an angle with respect to the reference line, the angles being equal to each other.

A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

An electronic circuit device includes a first electronic component having a set of first terminals disposed at a first pitch on a first surface, and a second electronic component having a set of second terminals disposed at a second pitch on a second surface facing the first surface of the first electronic component. The second pitch of the second terminals is set larger than the first pitch of the first terminals. By doing so, each of the second terminals is connected to at least one of the first terminals if a positional misalignment occurs. As a result, the electronic circuit device has an increased tolerance for positional misalignment between the first electronic component and the second electronic component and reduces the occurrence of connection failure.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150 C. before heating treatment of 50 Pa.Math.s or more and 3,000 Pa.Math.s or less, a viscosity change rate of 500% or less, at 150 C. as a result of the heating treatment, and a reaction rate represented by {(QtQh)/Qt}100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from 50 C. to 300 C. and Qh is a total calorific value in a process of temperature rise from 50 C. to 300 C. after heating at 175 C. for 2 hours in a DSC measurement.

A semiconductor device has a substrate. A plurality of conductive vias is formed through the substrate. A conductive layer is formed over the substrate. An insulating layer is formed over conductive layer. A portion of the substrate is removed to expose the conductive vias. A plurality of vertical interconnect structures is formed over the substrate. A first semiconductor die is disposed over the substrate. A height of the vertical interconnect structures is less than a height of the first semiconductor die. An encapsulant is deposited over the first semiconductor die and the vertical interconnect structures. A first portion of the encapsulant is removed from over the first semiconductor die while leaving a second portion of the encapsulant over the vertical interconnect structures. The second portion of the encapsulant is removed to expose the vertical interconnect structures. A second semiconductor die is disposed over the first semiconductor die.