Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

There are provided a thermosetting resin composition for semiconductor bonding and a thermosetting resin composition for light emitting device which have high thermal conductivity and an excellent heat dissipation property and are capable of reliable pressure-free bonding of a semiconductor element and a light emitting element to a substrate. A thermosetting resin composition comprising: (A) silver fine particles ranging from 1 nm to 200 nm in thickness or in minor axis; (B) a silver powder having an average particle size of more than 0.2 μm and 30 μm or less; (C) resin particles; and (D) a thermosetting resin, wherein an amount of the resin particles (C) is 0.01 to 1 part by mass and an amount of the thermosetting resin (D) is 1 to 20 parts by mass, to 100 parts by mass being a total amount of the silver fine particles (A) and the silver powder (B).

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method of forming an interconnection includes: providing an electronic component having a first main face and a first metallic layer disposed on the first main face; providing an electric component having a second main face and a second metallic layer disposed on the second main face, at least one of the first or second metallic layers including an oxide layer provided on a main face thereof; disposing a reducing agent on one or both of the electronic component and the electric component such that the reducing agent is enabled to remove the oxide layer; and connecting the electronic component to the electric component by directly connecting the first metallic layer of the electronic component with the second metallic layer of the electric component by applying pressure and heat.

A solder joint in which an electronic component with a back metal is bonded to a substrate by a solder alloy. The solder alloy includes: a solder alloy layer having an alloy composition consisting of, in mass %: Ag: 2 to 4%, Cu: 0.6 to 2%, Sb: 9.0 to 12%, Ni: 0.005 to 1%, optionally Co: 0.2% or less and Fe: 0.1% or less, with the balance being Sn; an Sn—Sb intermetallic compound phase; a back metal-side intermetallic compound layer formed at an interface between the back metal and the solder alloy; and a substrate-side intermetallic compound layer formed at an interface between the substrate and the solder alloy. The solder alloy layer exists at least one of between the Sn—Sb intermetallic compound phase and the back metal-side intermetallic compound layer, and between the Sn—Sb intermetallic compound phase and the substrate-side intermetallic compound layer.

Semiconductor packages may include a first semiconductor chip including a first through-electrode and a first upper connection pad and on an upper surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip and including a second lower connection pad on a lower surface of the second semiconductor chip, a connection bump between the first and second semiconductor chips and connected to the first upper connection pad and the second lower connection pad, a first insulating layer between the first and second semiconductor chips and surrounding the first upper connection pad, the connection bump, and the second lower connection pad, and a second insulating layer between the first semiconductor chip and the first insulating layer and extending on the upper surface of the first semiconductor chip, a side surface of the first upper connection pad, and a portion of a side surface of the connection bump.

There are provided a thermosetting resin composition for semiconductor bonding and a thermosetting resin composition for light emitting device which have high thermal conductivity and an excellent heat dissipation property and are capable of reliable pressure-free bonding of a semiconductor element and a light emitting element to a substrate. A thermosetting resin composition comprising: (A) silver fine particles ranging from 1 nm to 200 nm in thickness or in minor axis; (B) a silver powder having an average particle size of more than 0.2 m and 30 m or less; (C) resin particles; and (D) a thermosetting resin, wherein an amount of the resin particles (C) is 0.01 to 1 part by mass and an amount of the thermosetting resin (D) is 1 to 20 parts by mass, to 100 parts by mass being a total amount of the silver fine particles (A) and the silver powder (B).