Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a second semiconductor chip including a first face, wherein a first contact pad is arranged over the first face, wherein the first semiconductor chip and the second semiconductor chip are arranged such that the first face of the first semiconductor chip faces in a first direction and the first face of the second semiconductor chip faces in a second direction opposite to the first direction. The first semiconductor chip is located laterally outside of an outline of the second semiconductor chip.

A first structure for semiconductor devices having a dielectric film on the top surface can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The top surface of the dielectric film of the first structure can be hybrid bonded to a dielectric layer of a second structure. The dielectric film of the first structure and the dielectric layer of the second structure can be different dielectrics. In this way, the hybrid bonding of the two structures includes the hybrid bonding of asymmetric dielectrics.

A structure for semiconductor devices having a high-dielectric constant dielectric film on the top surface can be used to form devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The dielectric constant of the dielectric film can be about or greater than 8. A device can be formed by hybrid bonding the dielectric film of the structure to a dielectric film of a similar structure. A technique for forming the structure can include selectively depositing the dielectric film via atomic layer deposition after features filled with metal in a top layer of oxide in an oxide-metal-substrate stack. In order to selectively deposit the dielectric film, the metal may be covered with a polymer which can be burned off. A chemical-mechanical polishing technique can be used to precisely form the surface of the structure in preparation for hybrid bonding.