Techniques are disclosed for facilitating interconnecting semiconductor devices. In one example, a method of interconnecting a first substrate to a second substrate is provided. The method includes forming a first plurality of contacts on the first substrate. The method further includes forming an insulative layer on the first substrate. The method further includes forming a second plurality of contacts on the second substrate. The method further includes joining the first plurality of contacts to the second plurality of contacts to form interconnects between the first substrate and the second substrate. When the first and second substrates are joined, at least a portion of each of the interconnects is surrounded by the insulative layer. Related systems and devices are also provided.

A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.

A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.

A semiconductor device assembly has a first substrate, a second substrate, and an anisotropic conductive film. The first substrate includes a first plurality of connectors. The second substrate includes a second plurality of connectors. The anisotropic conductive film is positioned between the first plurality of connectors and the second plurality of connectors. The anisotropic conductive film has an electrically insulative material and a plurality of interconnects laterally separated by the electrically insulative material. The plurality of interconnects forms electrically conductive channels extending from the first plurality of connectors to the second plurality of connectors. A method includes connecting the plurality of interconnects to the first plurality of connectors and the second plurality of connectors, such that the electrically conductive channels are operable to conduct electricity from the first substrate to the second substrate. The method may include passing electrical current through the plurality of interconnects.