A method for producing a power-electronics switching device and a power electronic switching device produced thereby. In the power-electronics switching device, a power semiconductor component is arranged on a first region of a conductor track of a substrate. An insulating film comprising a cutout is then provided, wherein an overlap region of the insulating film, which overlap region is adjacent to the cutout, is designed to cover an edge region of the power semiconductor component. This is followed by arranging the insulating film on the substrate, with the power semiconductor component arranged on it, in such a way that the power semiconductor component is covered on all sides of its edge region by the covering region of the insulating film, wherein a further section of the insulating film covers parts of one of the conductor tracks. Finally, the connecting device is arranged.

A method of forming a die package is provided. The method includes attaching a die to a leadframe, attaching a clip to the die, wherein the clip includes a leadframe contact section that is arranged adjacent to a corresponding clip contact section of the leadframe, and deforming the clip contact section of the leadframe and/or the leadframe contact section of the clip to form a fixed electrically conductive contact between the leadframe and the clip.

In a method for producing a semiconductor assembly, a first load contact of a semiconductor element materially bonded to a first metallization of a substrate and a molded metal body is materially bonded to a second load contact of the semiconductor element, with the second load contact being arranged on a face of the semiconductor element facing away from the substrate. A contacting element is contacted to the second load contact of the semiconductor element via the molded metal body, with the contacting element being embodied as a metal sheet and profiled such as to form a plurality of contact points. The profiled contacting element is pressed against the semiconductor element via a housing cover, wherein the profiled contacting element is contacted to the first metallization of the substrate to connect the second load contact.

In a method for producing a semiconductor assembly, a first power contact of a semiconductor element is materially bonded to a first metallization of a substrate, and a second power contact of the semiconductor element is materially bonded to a molded metal body, with the second power contact being arranged on a face of the semiconductor element facing away from the substrate. A metallic contacting element is contacted directly in a planar manner on the molded metal body for contacting the metallic contacting element to the second power contact via the molded metal body. The metallic contacting element is pressed against the semiconductor element via a dielectric pressing element, with a force acting perpendicularly on the semiconductor element being transferred via the dielectric pressing element.