H01L2224/85355

Method of manufacturing semiconductor device
09972598 · 2018-05-15 · ·

Reliability of a semiconductor device is improved. A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20180082977 · 2018-03-22 ·

Reliability of a semiconductor device is improved.

A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

Sintered conductive matrix material on wire bond
09905502 · 2018-02-27 · ·

A method is disclosed of fabricating a microelectronic package comprising a substrate overlying the front face of a microelectronic element. A plurality of metal bumps project from conductive elements of the substrate towards the microelectronic element, the metal bumps having first ends extending from the conductive elements, second ends remote from the conductive elements, and lateral surfaces extending between the first and second ends. The metal bumps can be wire bonds having first and second ends attached to a same conductive pad of the substrate. A conductive matrix material contacts at least portions of the lateral surfaces of respective ones of the metal bumps and joins the metal bumps with contacts of the microelectronic element.

ANCHORING STRUCTURE OF FINE PITCH BVA

A microelectronic package can include a substrate having a first surface and a second surface opposite therefrom, the substrate having a first conductive element at the first surface, and a plurality of wire bonds, each of the wire bonds having a base electrically connected to a corresponding one of the first conductive elements and having a tip remote from the base, each wire bond having edge surfaces extending from the tip toward the base. The microelectronic package can also include an encapsulation having a major surface facing away from the first surface of the substrate, the encapsulation having a recess extending from the major surface in a direction toward the first surface of the substrate, the tip of a first one of the wire bonds being disposed within the recess, and an electrically conductive layer overlying an inner surface of the encapsulation exposed within the recess, the electrically conductive layer overlying and electrically connected with the tip of the first one of the wire bonds.

DUAL-INTERFACE IC CARD MODULE
20170092612 · 2017-03-30 ·

The disclosure relates to a dual-interface integrated circuit (IC) card module for use in a dual-interface IC card. Embodiments disclosed include a dual-interface integrated circuit card module (150), the module comprising: a substrate (104) having first and second opposing surfaces; a contact pad (102) on the first surface of the substrate; an integrated circuit (110) on the second surface of the substrate (104), the integrated circuit (110) having electrical connections to the contact pad (102) through the substrate (104); and a pair of antenna pads (108) disposed in recesses (103) in the second surface of the substrate (104) and electrically connected to corresponding antenna connections on the integrated circuit (110).

Flip chip assembly and process with sintering material on metal bumps
20170062318 · 2017-03-02 ·

A method is disclosed of fabricating a microelectronic package comprising a substrate overlying the front face of a microelectronic element. A plurality of metal bumps project from conductive elements of the substrate towards the microelectronic element, the metal bumps having first ends extending from the conductive elements, second ends remote from the conductive elements, and lateral surfaces extending between the first and second ends. The metal bumps can be wire bonds having first and second ends attached to a same conductive pad of the substrate. A conductive matrix material contacts at least portions of the lateral surfaces of respective ones of the metal bumps and joins the metal bumps with contacts of the microelectronic element.