A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

A semiconductor package includes a first die pad, a first semiconductor die mounted on the first die pad, an encapsulant body of electrically insulating material that encapsulates first die pad and the first semiconductor die, a plurality of package leads that each protrude out of a first outer face of the encapsulant body, a connection lug that protrudes out of a second outer face of the encapsulant body, the second outer face being opposite from the first outer face. The first semiconductor die includes first and second voltage blocking terminals. The connection lug is electrically connected to one of the first and second voltage blocking terminals of the first semiconductor die. A first one of the package leads is electrically connected to an opposite one of the first and second voltage blocking terminals of the first semiconductor die that the first connection lug is electrically connected to.

A semiconductor package includes a first die pad, a first semiconductor die mounted on the first die pad, an encapsulant body of electrically insulating material that encapsulates first die pad and the first semiconductor die, a plurality of package leads that each protrude out of a first outer face of the encapsulant body, a connection lug that protrudes out of a second outer face of the encapsulant body, the second outer face being opposite from the first outer face. The first semiconductor die includes first and second voltage blocking terminals. The connection lug is electrically connected to one of the first and second voltage blocking terminals of the first semiconductor die. A first one of the package leads is electrically connected to an opposite one of the first and second voltage blocking terminals of the first semiconductor die that the first connection lug is electrically connected to.

A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.

A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.

A semiconductor device, including an insulated circuit substrate that has a base plate, a resin layer disposed on a front surface of the base plate, and a circuit pattern disposed on a front surface of the resin layer; and a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance. Both the predetermined distance and a thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip.

An SIP module includes a plurality of electrical components mounted to an interconnect substrate. The electrical components and interconnect substrate are covered by an encapsulant. A conductive post is formed through the encapsulant. A plurality of openings is formed in the encapsulant by laser in a form of a circuit pattern. A conductive material is deposited over a surface of the encapsulant and into the openings to form an electrical circuit pattern. A portion of the conductive material is removed by a grinder to expose the electrical circuit pattern. The grinding operation planarizes the surface of the encapsulant and the electrical circuit pattern. The electrical circuit pattern can be a trace, contact pad, RDL, or other interconnect structure. The electrical circuit pattern can also be a shielding layer or antenna. An electrical component is disposed over the SIP module and electrical circuit pattern.

An SIP module includes a plurality of electrical components mounted to an interconnect substrate. The electrical components and interconnect substrate are covered by an encapsulant. A conductive post is formed through the encapsulant. A plurality of openings is formed in the encapsulant by laser in a form of a circuit pattern. A conductive material is deposited over a surface of the encapsulant and into the openings to form an electrical circuit pattern. A portion of the conductive material is removed by a grinder to expose the electrical circuit pattern. The grinding operation planarizes the surface of the encapsulant and the electrical circuit pattern. The electrical circuit pattern can be a trace, contact pad, RDL, or other interconnect structure. The electrical circuit pattern can also be a shielding layer or antenna. An electrical component is disposed over the SIP module and electrical circuit pattern.

A multifaceted capillary that can be used in a wire-bonding machine to create a multi-segment wire-bond is disclosed. The multifaceted capillary is shaped to apply added pressure and thickness to an outer segment of the multi-segment wire-bond that is closest to the wire loop. The added pressure eliminates a gap under a heel portion of the multi-segment wire-bond and the added thickness increases a mechanical strength of the heel portion. As a result, a pull test of the multi-segment wire-bond may be higher than a single-segment wire-bond and the multi-segment wire-bond may resist cracking, lifting, or breaking.

A multifaceted capillary that can be used in a wire-bonding machine to create a multi-segment wire-bond is disclosed. The multifaceted capillary is shaped to apply added pressure and thickness to an outer segment of the multi-segment wire-bond that is closest to the wire loop. The added pressure eliminates a gap under a heel portion of the multi-segment wire-bond and the added thickness increases a mechanical strength of the heel portion. As a result, a pull test of the multi-segment wire-bond may be higher than a single-segment wire-bond and the multi-segment wire-bond may resist cracking, lifting, or breaking.