A three-dimensional structure in which a wiring is provided on a surface is provided. At least a part of the surface of the three-dimensional structure includes an insulating layer containing filler. A recessed gutter for wiring is provided on the surface of the three-dimensional structure, and at least a part of a wiring conductor is embedded in the recessed gutter for wiring.

A semiconductor device package includes a first electronic component, a plurality of first conductive traces, a second electronic component, a plurality of second conductive traces and a plurality of first conductive structures. The first electronic component has a first active surface. The first conductive traces are disposed on and electrically connected to the first active surface. The second electronic component is stacked on the first electronic component. The second electronic component has an inactive surface facing the first active surface, a second active surface opposite the inactive surface, and at least one lateral surface connecting the second active surface and the inactive surface. The second conductive traces are electrically connected to the second active surface, and extending from the second active surface to the lateral surface. The first conductive structures are electrically connecting the second conductive traces to the first conductive traces, respectively.

The present invention generally relates to a radiation detector element wherein a photodiode is transversely fixed to a detector element substrate through at least one connection comprising two fused solder balls, wherein a first of the two fused solder balls contacts the photodiode and a second of the two fused solder balls (contacts the detector element substrate. The invention further relates to a method of transversally attaching two substrates, in particular constructing the above-mentioned radiation detector element. It also relates to an imaging system comprising at least one radiation detector element.

Semiconductor device packages may include a first semiconductor device over a substrate and a second semiconductor device over the first semiconductor device. An active surface of the second semiconductor device may face away from the substrate. Conductors may extend from bond pads of the second semiconductor device, along surfaces of the second semiconductor device, first semiconductor device, and substrate to pads of routing members of the substrate. The conductors may be in contact with the bond pads and the routing members and a dielectric material interposed between the conductors and the first semiconductor device and between the conductors and the second semiconductor device. An encapsulant distinct from the dielectric material may cover the conductors, the first semiconductor device, the second semiconductor device, and an upper surface of the substrate. Methods of fabrication are also disclosed.

A method for manufacturing an embedded chip package is provided. The method may include: forming electrically conductive lines over a substrate; placing the substrate next to a chip arrangement comprising a chip, the chip comprising one or more contact pads, wherein one or more of the electrically conductive lines are arranged proximate to a side wall of the chip; and forming one or more electrical interconnects over the chip arrangement to electrically connect at least one electrically conductive line to at least one contact pad.

Provided is a multi-chip package in which a plurality of semiconductor chips having different sizes are stacked. A multi-chip package may include a substrate, and a plurality of semiconductor chips stacked on the substrate, each of the plurality of semiconductor chips having a different size. Each of the plurality of semiconductor chips including a pad group and a reference region associated with the pad group, each pad group having a plurality of pads, and the plurality of pads in each pad group located at same coordinates with respect to the associated reference region, and each of the plurality of semiconductor chips having their reference regions vertically aligned.

In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The second internal interconnect can be coupled to the second electronic device and the first electronic device. The encapsulant can cover the substrate inner sidewall and the device stack, and can fill the cavity. Other examples and related methods are disclosed herein.

A semiconductor device has a plurality of interconnected modular units to form a 3D semiconductor package. Each modular unit is implemented as a vertical component or a horizontal component. The modular units are interconnected through a vertical conduction path and lateral conduction path within the vertical component or horizontal component. The vertical component and horizontal component each have an interconnect interposer or semiconductor die. A first conductive via is formed vertically through the interconnect interposer. A second conductive via is formed laterally through the interconnect interposer. The interconnect interposer can be programmable. A plurality of protrusions and recesses are formed on the vertical component or horizontal component, and a plurality of recesses on the vertical component or horizontal component. The protrusions are inserted into the recesses to interlock the vertical component and horizontal component. The 3D semiconductor package can be formed with multiple tiers of vertical components and horizontal components.

A semiconductor-chip stack package includes a plurality of semiconductor chips disposed in a stack arrangement and at least one connecting substrate which connects the semiconductor chips. The semiconductor chips include a chip terminal face on a chip edge extending at least partially as a side terminal face in a side surface of the semiconductor chip. The side surfaces of the semiconductor chips provided with the side terminal face are arranged in a shared side surface plane S of the semiconductor-chip stack arrangement. The connecting substrate is arranged with a contact surface parallel to the side surface plane S of the semiconductor chips. Substrate terminal faces are formed on the contact surface for connecting a connection conductor structure formed in the connecting substrate and which are connected to the side terminal faces via a connecting material in a connection plane V1 parallel to the contact surface.

An apparatus for transforming a preform into a container filled with liquid filling material includes a mold that forms a mold head, a sterilization system, a chamber that is common to a group of mold heads, an evacuation system that is connected to the chamber, and conduit lines, each of which connects a mold head to the chamber. The sterilization system sterilizes the interior of the preform while it is in sealing engagement with the mold head. The evacuation system creates a vacuum in the preform. Liquid filling material enters the preform under pressure and causes it to transform into a container.