H01L23/49838

Semiconductor device package and method of manufacturing the same

A semiconductor device package includes a substrate and a shielding layer. The substrate has a first surface, a second surface opposite to the first surface and a first lateral surface extending between the first surface and the second surface. The substrate has an antenna pattern disposed closer to the second surface than the first surface. The shielding layer extends from the first surface toward the second surface of the substrate. The shielding layer covers a first portion of the first lateral surface adjacent to the first surface of the substrate. The shielding layer exposes a second portion of the first lateral surface adjacent to the second surface of the substrate.

Prepreg for coreless substrate, coreless substrate and semiconductor package

The present invention provides a prepreg for a coreless substrate and a coreless substrate and a semiconductor package using the prepreg, which can satisfy heat resistance, low thermal expansion, and bonding strength with a metal circuit at a level required for the coreless substrate. Specifically, the prepreg for a coreless substrate contains a thermosetting resin composition containing (a) dicyandiamide, (b) an adduct of a tertiary phosphine and quinones, (c) an amine compound having at least two primary amino groups, and (d) a maleimide compound having at least two primary amino groups having at least two N-substituted maleimide groups. Instead of (c) the amine compound having at least two primary amino groups and (d) the maleimide compound, having at least two N-substituted maleimide groups, (X) an amino-modified polyimide resin obtained by reacting them may be used.

Flip chip package and circuit board thereof

A flip chip package includes a circuit board, a chip and a solder layer. The chip is mounted on an inner bonding area of the circuit board. The solder layer is located between the circuit board and the chip for bonding bumps to inner leads and a T-shaped circuit unit is on the inner bonding area. The T-shaped circuit unit has a main part, a connection part, and a branch part. The connection part is connected to the main and branch parts, respectively. The main part extends along a lateral direction and the branch part extends outwardly along a longitudinal direction. The connection part is narrower than the main part in width so as to inhibit solder shorts caused by solder overflow on the branch part.

Component Carrier and Method of Manufacturing a Component Carrier

A component carrier includes a stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure. The at least one electrically conductive layer structure includes a first trace. A tapering trench is formed in the at least one electrically insulating layer structure beside and below the first trace. A method of manufacturing the component carrier is also described.

SEMICONDUCTOR DEVICE AND POWER CONVERTER

A semiconductor device includes a semiconductor element, a first wiring member, a second wiring member, and a terminal. The semiconductor element includes a first main electrode and a second main electrode on a side opposite from the first main electrode. The first wiring member is connected to the first main electrode. The terminal has a first terminal surface connected to the second main electrode and a second terminal surface. The second terminal has four sides. Two of the four sides are parallel to a first direction intersecting the thickness direction, and other two sides of the four sides are parallel to a second direction perpendicular to the thickness direction and the first direction. The second wiring member is connected to the second terminal surface of the terminal through solder, and has a groove. The groove overlaps one or two of the four sides of the second terminal surface.

CERAMIC CIRCUIT BOARD, HEAT-DISSIPATING MEMBER, AND ALUMINUM-DIAMOND COMPOSITE
20230042932 · 2023-02-09 · ·

A ceramic circuit board includes a ceramic base material, a metal layer (first metal layer), and a marker portion. The marker portion is formed on the surface of the first metal layer. The surface of the metal layer (first metal layer) may be plated. When the surface of the metal layer (first metal layer) is plated, the marker portion may be formed on the plating.

ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, DISPLAY PANEL, AND BACKLIGHT MODULE

An array substrate and a manufacturing method therefor, a display panel, and a backlight module, are provided. The array substrate may comprise a base substrate, a metal wiring layer, a first planarization layer, an electrode layer, a second planarization layer, and a functional device layer stacked in sequence. The electrode layer comprises a metal sub-layer and a conductive sub-layer stacked on one side of the base substrate in sequence; the material of the metal sub-layer comprises a metal or a metal alloy; the conductive sub-layer has an oxidation resistance and covers the metal sub-layer . The functional device layer is disposed on the side of the second planarization layer distant from the base substrate, and comprises a plurality of functional devices electrically connected to the electrode layer.

LAYOUT STRUCTURE OF FLEXIBLE CIRCUIT BOARD
20230044345 · 2023-02-09 ·

A layout structure of flexible circuit board includes a flexible substrate, a circuit layer, a flip-chip element and an anti-stress circuit layer. A chip mounting area and a circuit area are defined on a top surface of the flexible substrate. Bonding circuits and transmission circuits of the circuit layer are disposed on the chip mounting area and the circuit area respectively. The flip-chip element is disposed on the chip mounting area and includes bumps and a chip having a long side margin and conductive pads, the bumps are provided to connect the conductive pads and the bonding circuits. Anti-stress circuits of the anti-stress circuit layer are disposed on the chip mounting area and parallel to the long side margin of the chip, and the bumps are located between the anti-stress circuits and the long side margin of the chip.

FLIP-CHIP ENHANCED QUAD FLAT NO-LEAD ELECTRONIC DEVICE WITH CONDUCTOR BACKED COPLANAR WAVEGUIDE TRANSMISSION LINE FEED IN MULTILEVEL PACKAGE SUBSTRATE
20230044284 · 2023-02-09 ·

An electronic device includes a multilevel package substrate with first, second, third, and fourth levels, a semiconductor die mounted to the first level, and a conductor backed coplanar waveguide transmission line feed with an interconnect and a conductor, the interconnect including coplanar first, second, and third conductive lines extending in the first level along a first direction from respective ends to an antenna, the second and third conductive lines spaced apart from opposite sides of the first conductive line along an orthogonal second direction, and the conductor extending in the third level under the interconnect and under the antenna.

PRINTED CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE WHICH INCLUDE MULTI-LAYERED PHOTOSENSITIVE INSULATING LAYER, AND METHOD OF MANUFACTURING THE SAME
20230042852 · 2023-02-09 ·

A printed circuit board may include a substrate body portion, conductive patterns on a top surface of the substrate body portion, and a photosensitive insulating layer on the top surface of the substrate body portion and including an opening exposing at least one of the conductive patterns. The photosensitive insulating layer includes first to third sub-layers stacked sequentially. The first sub-layer includes an amine compound or an amide compound A refractive index of the second sub-layer is lower than a refractive index of the third sub-layer. A photosensitizer content of the second sub-layer is higher than a photosensitizer content of the third sub-layer.