A die includes one or more power delivery layers to deliver power within the die. Additionally, the die also includes one or more transistor layers to at least partially implement a programmable fabric for the die. Furthermore, the die further includes one or more signal routing layers to transmit signals for use by the programmable fabric. Moreover, the one or more transistor layers physically separate the one or more power delivery layers from the one or more signal routing layers.

A die includes one or more power delivery layers to deliver power within the die. Additionally, the die also includes one or more transistor layers to at least partially implement a programmable fabric for the die. Furthermore, the die further includes one or more signal routing layers to transmit signals for use by the programmable fabric. Moreover, the one or more transistor layers physically separate the one or more power delivery layers from the one or more signal routing layers.

A memory device includes a first transistor. The first transistor includes one or more first semiconductor nanostructures spaced apart from one another along a first direction. Each of the one or more first semiconductor nanostructures has a first width along a second direction perpendicular to the first direction. The memory device also includes a second transistor coupled to the first transistor in series. The second transistor includes one or more second semiconductor nanostructures spaced apart from one another along the first direction. Each of the one or more second semiconductor nanostructures has a second, different width along the second direction.

The present disclosure provides a method for preparing a semiconductor device with a copper-manganese liner. The method includes forming an opening structure in a first dielectric layer, wherein the opening structure has a first portion, a second portion and a third portion disposed between and physically connecting the first portion and the second portion; forming a lining material lining the first portion and the second portion of the opening structure and completely filling the third portion of the opening structure, wherein the lining material includes copper-manganese (CuMn); filling the first portion and the second portion of the opening structure with a conductive material after the lining material is formed; and performing a planarization process on the lining material and the conductive material.

The present disclosure provides a semiconductor device with a fuse structure and an anti-fuse structure and a method for forming the semiconductor device. The semiconductor device includes a first dielectric layer disposed over a semiconductor substrate, and a first electrode disposed over the first dielectric layer. The semiconductor device also includes a fuse link disposed over the first electrode, and a second electrode disposed over the fuse link. The semiconductor device further includes a third electrode disposed adjacent to the first electrode, and a second dielectric layer separating the first electrode from the first dielectric layer and the third electrode. The first electrode, the fuse link, and the second electrode form a fuse structure, and the first electrode, the third electrode, and a portion of the second dielectric layer between the first electrode and the third electrode form an anti-fuse structure.

A 3D semiconductor device including: a first single crystal layer with first transistors; overlaid by a first metal layer; a second metal layer overlaying the first metal layer and being overlaid by a third metal layer; a logic gates including at least the first metal layer interconnecting the first transistors; second transistors disposed atop the third metal layer; third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, and at least four memory mini arrays, where each of the memory mini arrays includes at least four rows by four columns of memory cells, where each of the memory cells includes at least one of the second transistors or third transistors, sense amplifier circuit(s) for each of the memory mini arrays, the second metal layer provides a greater current carrying capacity than the third metal layer.

An integrated circuit device includes an anti-fuse device. The anti-fuse device includes a cup-shaped bottom anti-fuse electrode, a cup-shaped anti-fuse insulator formed in an opening defined by the cup-shaped bottom anti-fuse electrode, and a top anti-fuse electrode formed in an opening defined by the cup-shaped anti-fuse insulator. A thickness of the cup-shaped anti-fuse insulator is less than 200 Å.

A layout structure of an anti-fuse array at least includes an array circuit area and a functional circuit area. The array circuit area is electrically connected with the functional circuit area. The functional circuit area is located on at least one side of the array circuit area, and at least one side of the array circuit area is located on an edge of the layout structure. The array circuit area includes an anti-fuse array composed of anti-fuse cells, and the array circuit area is configured to provide the anti-fuse cells under different column addresses to the functional circuit area. The functional circuit area is configured to fuse the anti-fuse cells under the different column addresses.

A semiconductor structure includes a semiconductor device (e.g., an e-fuse or photonic device) and a metallic heating element adjacent thereto. The heating element has a lower portion within a middle of the line (MOL) dielectric layer adjacent to the semiconductor device and an upper portion with a tapered top end that extends into a back end of the line (BEOL) dielectric layer. A method of forming the semiconductor structure includes forming a cavity such that it has both a lower section, which extends from a top surface of a MOL dielectric layer downward toward a semiconductor device, and an upper section, which extends from the top surface of the MOL dielectric layer upward and which is capped by an area of a BEOL dielectric layer having a concave bottom surface. A metallic fill material can then be deposited into the cavity (e.g., through via openings) to form the heating element.

Structures for an electronic fuse and methods of forming an electronic fuse. The structure includes a first terminal, a second terminal, and a fuse link extending from the first terminal to the second terminal. The structure further includes a silicide layer having a first portion included in the fuse link and a second portion included in the first terminal and the second terminal. The first portion of the silicide layer has a first thickness, the second portion of the silicide layer has a second thickness, and the first thickness is less than the second thickness.