Fabrication methods and device structures for heterojunction bipolar transistors. A first emitter of a first heterojunction bipolar transistor and a second collector of a second heterojunction bipolar transistor are formed in a device layer of a silicon-on-insulator substrate. A first base layer of a first heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the first emitter. A first collector of the first heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the first base layer. A second base layer of the second heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the second collector. A second emitter of the second heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the second base layer. A connection is formed between the first emitter and the second collector.

Fabrication methods and device structures for heterojunction bipolar transistors. A first emitter of a first heterojunction bipolar transistor and a second collector of a second heterojunction bipolar transistor are formed in a device layer of a silicon-on-insulator substrate. A first base layer of a first heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the first emitter. A first collector of the first heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the first base layer. A second base layer of the second heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the second collector. A second emitter of the second heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the second base layer. A connection is formed between the first emitter and the second collector.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

A semiconductor device includes a semiconductor body, a vertical transistor arranged in a first device region of the semiconductor body, and a lateral transistor arranged in a second device region of the semiconductor body. The vertical transistor includes a plurality of drift regions of a first doping type and a plurality of compensation regions of a second doping type complementary to the first doping type. The drift regions and the compensation regions are arranged alternately in a lateral direction of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The lateral transistor includes device regions arranged in the first semiconductor region.

Fabrication methods and device structures for heterojunction bipolar transistors. A first emitter of a first heterojunction bipolar transistor and a second collector of a second heterojunction bipolar transistor are formed in a device layer of a silicon-on-insulator substrate. A first base layer of a first heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the first emitter. A first collector of the first heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the first base layer. A second base layer of the second heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the second collector. A second emitter of the second heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the second base layer. A connection is formed between the first emitter and the second collector.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.