The disclosed provides a thin film transistor, an array substrate, a display device and methods of manufacturing the thin film transistor and the array substrate. An active layer of the thin film transistor is formed of metallic oxide material, and a source electrode and a drain electrode of the thin film transistor both are formed of graphene or silver nanowire. The source electrode and the drain electrode are formed through an ink-jet printing process. Due to characteristics of graphene or silver nanowire, the manufacturing process of the thin film transistor may be simplified, the performance of the thin film transistor may be improved and the size of a channel region may be decreased. Further, an aperture ratio of the array substrate and the display device having such a thin film transistor may be increased.

A printing apparatus applies ink to a surface of a printing plate in the shape of a predetermined pattern and then transfers the ink to a substrate. The printing apparatus includes: an image recording section that applies the ink to the surface of the printing plate; a plate surface observation unit that acquires information about the surface of the printing plate; a storage section that stores information about a reference shape serving as a reference of the surface of the printing plate; and a determination section that compares the information about the reference shape stored in the storage section with the information about the surface of the printing plate, which is obtained by the plate surface observation unit, and determines whether or not the surface of the printing plate to which the ink has been applied is present in a predetermined range of the reference shape.

To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.

The invention relates to a method for manufacturing an electronic device, particularly a device including a flexible and/or low-cost substrate and/or carbon nanotubes, and also relates to electronic devices produced using said method. The method for manufacturing an electronic device, including a substrate mad of a material M and an active semiconductor material layer (3), includes the following steps: a) providing a carrier (10) made of an alkali metal salt or alkaline earth metal salt, preferably sodium chloride (NaCl) or potassium chloride (KCl); optionally, b) depositing a dielectric material layer (2) onto one surface of the carrier; c) forming an active semiconductor material layer (3) on one surface of the carrier when Step b) is not implemented or on the free surface of the layer when Step b) is implemented; d) forming different components of the electronic device on and/or under the layer; e) depositing a protective layer onto the layer stack, obtained in Step d), of the different components of the electronic device, said protective layer being made of the material M required for the substrate (1); and f) removing the carrier (10) by dissolving one or more of the components of said electronic device on a substrate different from the substrate (1). In said removal of the carrier, the method does not include any step for manufacturing one or more of the components of said electronic device on a substrate different from the substrate (1). The invention is of use in the field of electronics in particular.

A thin film transistor array includes thin film transistors positioned in a matrix, each of the thin film transistors including a substrate, a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, a source electrode formed on the gate insulation layer, a drain electrode formed on the gate insulation layer, a pixel electrode formed on the gate insulation layer and connected to the source electrode and the drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, an interlayer insulation film covering the source electrode, the drain electrode, the semiconductor layer and a portion of the pixel electrode, and an upper pixel electrode formed on the interlayer insulation film and connected to the pixel electrode. The interlayer insulation film has one or more concave portions and one or more via hole portions.

The present application discloses a manufacturing method for a display panel and the display panel, and the manufacturing method includes a manufacture procedure of forming an array substrate, where the manufacture procedure of forming an array substrate includes: forming a buffer layer with a preset pattern on a glass substrate; placing the glass substrate with the buffer layer formed thereon into an electrochemical deposition device, and performing electrochemical deposition to form a copper alloy metal layer corresponding to the buffer layer; heating and annealing the copper alloy metal layer to form a first metal layer; sequentially forming an insulating layer, an active layer, a second metal layer, a passivation layer and a transparent electrode layer on the first metal layer, where the first metal layer includes a buffer layer and a copper alloy metal layer.

The present application discloses a array substrate, a manufacturing method of the array substrate, and a display panel, the manufacture procedure includes the following steps: sequentially forming a buffer layer and a photoresist layer on a glass substrate; placing the substrate into an activation agent for activation, and forming an activation liquid particle layer with a first preset pattern at a corresponding position where the activation agent is in contact with the photoresist layer, and forming an activation liquid particle layer with a second preset pattern at a corresponding position where the activation agent is in contact with the buffer layer; removing the photoresist layer and the activation liquid particle layer with the first preset pattern; and performing chemical plating to form a first metal layer at a position corresponding to the activation liquid particle layer with the second preset pattern in contact with the buffer layer.

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

The present application discloses a display panel and a method for manufacturing a first substrate thereof. The display panel includes a first substrate which is provided with a thin film transistor. The thin film transistor includes a gate, a source and a drain. Light shielding layers are disposed on the outer side of the source and the outer side of the drain.

The present invention provides an array substrate and a manufacturing method thereof. The array substrate of the present invention includes: a base plate (1), a TFT layer (2) arranged on the base plate (1), a quantum dot layer (3) arranged on the TFT layer (2), and a protective filter layer (4) arranged on the quantum dot layer (3). The arrangement of the quantum dot layer (3) helps compensate the insufficiency of color displaying of an existing color filter layer and expands the range of color gamut. The arrangement of the protective filter layer (4) helps overcome the issues of poor efficiency and stability of the prior art quantum dot.